ZrB 2 Schottky diode contacts on n-GaN

R. Khanna, K. Ramani, V. Cracium, R. Singh, S. J. Pearton, F. Ren, I. I. Kravchenko

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13 Scopus citations


The annealing temperature dependence of rectifying contact characteristics on epilayers of n-GaN using a ZrB 2 /Ti/Au metallization scheme deposited by sputtering are reported. A maximum barrier height of 0.57 eV was achieved on samples annealed at 200 °C, with the reverse breakdown voltage of the diodes also a maximum after this anneal. The barrier height was essentially independent of annealing temperature up to 700 °C even though Auger electron spectroscopy depth profiling showed the onset of inter-contact metallurgical reactions at 500 °C. The Ti began to outdiffuse to the surface at temperatures of 350 °C, while the ZrB 2 /GaN interface showed no evidence of reaction even at 800 °C. The reverse current magnitude of diodes fabricated using the ZrB 2 contacts was larger than predicted by thermionic emission alone.

Original languageEnglish
Pages (from-to)2315-2319
Number of pages5
JournalApplied Surface Science
Issue number4
StatePublished - 15 Dec 2006
Externally publishedYes


The work at UF is partially supported by AFOSR grant under grant number F49620-03-1-0370, by the Army Research Office under grant no. DAAD19-01-1-0603, NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich) and the National Science Foundation (DMR 0400416, Dr. L. Hess).

FundersFunder number
National Science FoundationCTS-0301178, DMR 0400416
Air Force Office of Scientific ResearchF49620-03-1-0370
Army Research OfficeDAAD19-01-1-0603
University of Florida


    • Contacts
    • GaN
    • Schottky


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