ZrB 2 /Pt/Au Ohmic contacts on bulk, single-crystal ZnO

J. S. Wright, Rohit Khanna, K. Ramani, V. Cranciun, R. Singh, D. P. Norton, S. J. Pearton, F. Ren, I. I. Kravchenko

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9 Scopus citations


There is a strong interest in developing thermally stable metallization schemes for ZnO and boride-based contact stacks are expected to have potential because of their thermodynamic stability. The contact characteristics on bulk single-crystal n-ZnO of a ZrB 2 /Pt/Au metallization scheme deposited by sputtering are reported as a function of annealing temperature in the range 300-800°C. The contacts were rectifying for anneal temperatures <500 °C but exhibited Ohmic behavior at higher temperatures and exhibit a minimum specific contact resistivity of 9 × 10 -3 Ω cm after 700 °C anneals. The contact stack reverts to rectifying behavior after annealing above 800 °C, coincident with a degraded surface morphology and intermixing of the Au, Pt and ZrB 2 . The boride-based contacts exhibit higher thermal stability but poorer specific contact resistivity than conventional Ti/Au metal stacks on ZnO.

Original languageEnglish
Pages (from-to)2465-2469
Number of pages5
JournalApplied Surface Science
Issue number5
StatePublished - 30 Dec 2006
Externally publishedYes


  • Borides
  • Contacts
  • ZnO


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