ZrB                         2                         /Pt/Au Ohmic contacts on bulk, single-crystal ZnO

J. S. Wright; Rohit Khanna; K. Ramani; V. Cranciun; R. Singh; D. P. Norton; S. J. Pearton; F. Ren; I. I. Kravchenko

doi:10.1016/j.apsusc.2006.04.058

ZrB ₂ /Pt/Au Ohmic contacts on bulk, single-crystal ZnO

J. S. Wright, Rohit Khanna, K. Ramani, V. Cranciun, R. Singh, D. P. Norton, S. J. Pearton, F. Ren, I. I. Kravchenko

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

There is a strong interest in developing thermally stable metallization schemes for ZnO and boride-based contact stacks are expected to have potential because of their thermodynamic stability. The contact characteristics on bulk single-crystal n-ZnO of a ZrB ₂ /Pt/Au metallization scheme deposited by sputtering are reported as a function of annealing temperature in the range 300-800°C. The contacts were rectifying for anneal temperatures <500 °C but exhibited Ohmic behavior at higher temperatures and exhibit a minimum specific contact resistivity of 9 × 10 ^-3 Ω cm after 700 °C anneals. The contact stack reverts to rectifying behavior after annealing above 800 °C, coincident with a degraded surface morphology and intermixing of the Au, Pt and ZrB ₂ . The boride-based contacts exhibit higher thermal stability but poorer specific contact resistivity than conventional Ti/Au metal stacks on ZnO.

Original language	English
Pages (from-to)	2465-2469
Number of pages	5
Journal	Applied Surface Science
Volume	253
Issue number	5
DOIs	https://doi.org/10.1016/j.apsusc.2006.04.058
State	Published - 30 Dec 2006
Externally published	Yes

Keywords

Borides
Contacts
ZnO

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10.1016/j.apsusc.2006.04.058

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title = " ZrB 2 /Pt/Au Ohmic contacts on bulk, single-crystal ZnO ",

abstract = " There is a strong interest in developing thermally stable metallization schemes for ZnO and boride-based contact stacks are expected to have potential because of their thermodynamic stability. The contact characteristics on bulk single-crystal n-ZnO of a ZrB 2 /Pt/Au metallization scheme deposited by sputtering are reported as a function of annealing temperature in the range 300-800°C. The contacts were rectifying for anneal temperatures <500 °C but exhibited Ohmic behavior at higher temperatures and exhibit a minimum specific contact resistivity of 9 × 10 -3 Ω cm after 700 °C anneals. The contact stack reverts to rectifying behavior after annealing above 800 °C, coincident with a degraded surface morphology and intermixing of the Au, Pt and ZrB 2 . The boride-based contacts exhibit higher thermal stability but poorer specific contact resistivity than conventional Ti/Au metal stacks on ZnO.",

keywords = "Borides, Contacts, ZnO",

author = "Wright, {J. S.} and Rohit Khanna and K. Ramani and V. Cranciun and R. Singh and Norton, {D. P.} and Pearton, {S. J.} and F. Ren and Kravchenko, {I. I.}",

year = "2006",

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doi = "10.1016/j.apsusc.2006.04.058",

language = "אנגלית",

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T1 - ZrB 2 /Pt/Au Ohmic contacts on bulk, single-crystal ZnO

AU - Wright, J. S.

AU - Khanna, Rohit

AU - Ramani, K.

AU - Cranciun, V.

AU - Singh, R.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Ren, F.

AU - Kravchenko, I. I.

PY - 2006/12/30

Y1 - 2006/12/30

N2 - There is a strong interest in developing thermally stable metallization schemes for ZnO and boride-based contact stacks are expected to have potential because of their thermodynamic stability. The contact characteristics on bulk single-crystal n-ZnO of a ZrB 2 /Pt/Au metallization scheme deposited by sputtering are reported as a function of annealing temperature in the range 300-800°C. The contacts were rectifying for anneal temperatures <500 °C but exhibited Ohmic behavior at higher temperatures and exhibit a minimum specific contact resistivity of 9 × 10 -3 Ω cm after 700 °C anneals. The contact stack reverts to rectifying behavior after annealing above 800 °C, coincident with a degraded surface morphology and intermixing of the Au, Pt and ZrB 2 . The boride-based contacts exhibit higher thermal stability but poorer specific contact resistivity than conventional Ti/Au metal stacks on ZnO.

AB - There is a strong interest in developing thermally stable metallization schemes for ZnO and boride-based contact stacks are expected to have potential because of their thermodynamic stability. The contact characteristics on bulk single-crystal n-ZnO of a ZrB 2 /Pt/Au metallization scheme deposited by sputtering are reported as a function of annealing temperature in the range 300-800°C. The contacts were rectifying for anneal temperatures <500 °C but exhibited Ohmic behavior at higher temperatures and exhibit a minimum specific contact resistivity of 9 × 10 -3 Ω cm after 700 °C anneals. The contact stack reverts to rectifying behavior after annealing above 800 °C, coincident with a degraded surface morphology and intermixing of the Au, Pt and ZrB 2 . The boride-based contacts exhibit higher thermal stability but poorer specific contact resistivity than conventional Ti/Au metal stacks on ZnO.

KW - Borides

KW - Contacts

KW - ZnO

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DO - 10.1016/j.apsusc.2006.04.058

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AN - SCOPUS:33751425258

SN - 0169-4332

VL - 253

SP - 2465

EP - 2469

JO - Applied Surface Science

JF - Applied Surface Science

IS - 5

ER -

ZrB ₂ /Pt/Au Ohmic contacts on bulk, single-crystal ZnO

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Keywords

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