XBn barrier photodetectors based on InAsSb with high operating temperatures

Philip Klipstein; Olga Klin; Steve Grossman; Noam Snapi; Inna Lukomsky; Daniel Aronov; Michael Yassen; Alex Glozman; Tal Fishman; Eyal Berkowicz; Osnat Magen; Itay Shtrichman; Eliezer Weiss

doi:10.1117/1.3572149

XBn barrier photodetectors based on InAsSb with high operating temperatures

Philip Klipstein, Olga Klin, Steve Grossman, Noam Snapi, Inna Lukomsky, Daniel Aronov, Michael Yassen, Alex Glozman, Tal Fishman, Eyal Berkowicz, Osnat Magen, Itay Shtrichman, Eliezer Weiss

SemiConductor Devices

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Abstract

We demonstrate the suppression of the bulk generationrecombination current in nBn devices based on an InAsSb active layer (AL) and a AlSbAs barrier layer (BL). This leads to much lower dark currents than in conventional InAsSb photodiodes operating at the same temperature. When the BL is p-type, very high doping must be used in the AL (nBpn⁺). This results in a significant shortening of the device cutoff wavelength due to the Moss-Burstein effect. For an n-type BL, low AL doping can be used (nBnn), yielding a cutoff wavelength of ∼4.1 μm and a dark current close to ∼3 × 10⁷ A/cm² at 150 K. Such a device with a 4-μm-thick AL will exhibit a quantum efficiency (QE) of 70% and background-limited performance operation up to 160 K at f/3. We have madenBnn focal plane array detectors (FPAs) with a 320×256 format and a 1.3-μm-thick AL. These FPAs have a 35% QE and a noise equivalent temperature difference of 16 mK at 150 K and f/3. The high performance of our nBnn detectors is closely related to the high quality of the molecular beam epitaxy grown InAsSb AL material. On the basis of the temperature dependence of the diffusion limited dark current, we estimate a minority carrier lifetime of ∼670 ns.

Original language	English
Article number	061002
Journal	Optical Engineering
Volume	50
Issue number	6
DOIs	https://doi.org/10.1117/1.3572149
State	Published - Jun 2011
Externally published	Yes

Bibliographical note

Funding Information:
The material in this paper is based on work supported by the Defense Advanced Research Projects Agency (DARPA) under Contract No. HR0011-08-C-0063. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the DARPA, the U.S. Department of Defense, or the U.S. Government. The authors acknowledge technical support from S. Greenberg, who was responsible for the smooth operation of the two MBE machines, and B. Yariv, H. Moshe, H Schanzer, Y. Caracenti, D. Gur, and S. Weinstein, who have all contributed to the successful processing, packaging, or characterization of the devices.

Funding

The material in this paper is based on work supported by the Defense Advanced Research Projects Agency (DARPA) under Contract No. HR0011-08-C-0063. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the DARPA, the U.S. Department of Defense, or the U.S. Government. The authors acknowledge technical support from S. Greenberg, who was responsible for the smooth operation of the two MBE machines, and B. Yariv, H. Moshe, H Schanzer, Y. Caracenti, D. Gur, and S. Weinstein, who have all contributed to the successful processing, packaging, or characterization of the devices.

Funders	Funder number
Defense Advanced Research Projects Agency

Keywords

Shockley-Read-Hall
XBn
diffusion currents
generation-recombination
high operating temperatures
indium arsenide antimonide
infrared detectors
nBn

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title = "XBn barrier photodetectors based on InAsSb with high operating temperatures",

abstract = "We demonstrate the suppression of the bulk generationrecombination current in nBn devices based on an InAsSb active layer (AL) and a AlSbAs barrier layer (BL). This leads to much lower dark currents than in conventional InAsSb photodiodes operating at the same temperature. When the BL is p-type, very high doping must be used in the AL (nBpn+). This results in a significant shortening of the device cutoff wavelength due to the Moss-Burstein effect. For an n-type BL, low AL doping can be used (nBnn), yielding a cutoff wavelength of ∼4.1 μm and a dark current close to ∼3 × 107 A/cm2 at 150 K. Such a device with a 4-μm-thick AL will exhibit a quantum efficiency (QE) of 70% and background-limited performance operation up to 160 K at f/3. We have madenBnn focal plane array detectors (FPAs) with a 320×256 format and a 1.3-μm-thick AL. These FPAs have a 35% QE and a noise equivalent temperature difference of 16 mK at 150 K and f/3. The high performance of our nBnn detectors is closely related to the high quality of the molecular beam epitaxy grown InAsSb AL material. On the basis of the temperature dependence of the diffusion limited dark current, we estimate a minority carrier lifetime of ∼670 ns.",

keywords = "Shockley-Read-Hall, XBn, diffusion currents, generation-recombination, high operating temperatures, indium arsenide antimonide, infrared detectors, nBn",

author = "Philip Klipstein and Olga Klin and Steve Grossman and Noam Snapi and Inna Lukomsky and Daniel Aronov and Michael Yassen and Alex Glozman and Tal Fishman and Eyal Berkowicz and Osnat Magen and Itay Shtrichman and Eliezer Weiss",

note = "Funding Information: The material in this paper is based on work supported by the Defense Advanced Research Projects Agency (DARPA) under Contract No. HR0011-08-C-0063. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the DARPA, the U.S. Department of Defense, or the U.S. Government. The authors acknowledge technical support from S. Greenberg, who was responsible for the smooth operation of the two MBE machines, and B. Yariv, H. Moshe, H Schanzer, Y. Caracenti, D. Gur, and S. Weinstein, who have all contributed to the successful processing, packaging, or characterization of the devices.",

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doi = "10.1117/1.3572149",

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T1 - XBn barrier photodetectors based on InAsSb with high operating temperatures

AU - Klipstein, Philip

AU - Klin, Olga

AU - Grossman, Steve

AU - Snapi, Noam

AU - Lukomsky, Inna

AU - Aronov, Daniel

AU - Yassen, Michael

AU - Glozman, Alex

AU - Fishman, Tal

AU - Berkowicz, Eyal

AU - Magen, Osnat

AU - Shtrichman, Itay

AU - Weiss, Eliezer

N1 - Funding Information: The material in this paper is based on work supported by the Defense Advanced Research Projects Agency (DARPA) under Contract No. HR0011-08-C-0063. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the DARPA, the U.S. Department of Defense, or the U.S. Government. The authors acknowledge technical support from S. Greenberg, who was responsible for the smooth operation of the two MBE machines, and B. Yariv, H. Moshe, H Schanzer, Y. Caracenti, D. Gur, and S. Weinstein, who have all contributed to the successful processing, packaging, or characterization of the devices.

PY - 2011/6

Y1 - 2011/6

N2 - We demonstrate the suppression of the bulk generationrecombination current in nBn devices based on an InAsSb active layer (AL) and a AlSbAs barrier layer (BL). This leads to much lower dark currents than in conventional InAsSb photodiodes operating at the same temperature. When the BL is p-type, very high doping must be used in the AL (nBpn+). This results in a significant shortening of the device cutoff wavelength due to the Moss-Burstein effect. For an n-type BL, low AL doping can be used (nBnn), yielding a cutoff wavelength of ∼4.1 μm and a dark current close to ∼3 × 107 A/cm2 at 150 K. Such a device with a 4-μm-thick AL will exhibit a quantum efficiency (QE) of 70% and background-limited performance operation up to 160 K at f/3. We have madenBnn focal plane array detectors (FPAs) with a 320×256 format and a 1.3-μm-thick AL. These FPAs have a 35% QE and a noise equivalent temperature difference of 16 mK at 150 K and f/3. The high performance of our nBnn detectors is closely related to the high quality of the molecular beam epitaxy grown InAsSb AL material. On the basis of the temperature dependence of the diffusion limited dark current, we estimate a minority carrier lifetime of ∼670 ns.

AB - We demonstrate the suppression of the bulk generationrecombination current in nBn devices based on an InAsSb active layer (AL) and a AlSbAs barrier layer (BL). This leads to much lower dark currents than in conventional InAsSb photodiodes operating at the same temperature. When the BL is p-type, very high doping must be used in the AL (nBpn+). This results in a significant shortening of the device cutoff wavelength due to the Moss-Burstein effect. For an n-type BL, low AL doping can be used (nBnn), yielding a cutoff wavelength of ∼4.1 μm and a dark current close to ∼3 × 107 A/cm2 at 150 K. Such a device with a 4-μm-thick AL will exhibit a quantum efficiency (QE) of 70% and background-limited performance operation up to 160 K at f/3. We have madenBnn focal plane array detectors (FPAs) with a 320×256 format and a 1.3-μm-thick AL. These FPAs have a 35% QE and a noise equivalent temperature difference of 16 mK at 150 K and f/3. The high performance of our nBnn detectors is closely related to the high quality of the molecular beam epitaxy grown InAsSb AL material. On the basis of the temperature dependence of the diffusion limited dark current, we estimate a minority carrier lifetime of ∼670 ns.

KW - Shockley-Read-Hall

KW - XBn

KW - diffusion currents

KW - generation-recombination

KW - high operating temperatures

KW - indium arsenide antimonide

KW - infrared detectors

KW - nBn

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XBn barrier photodetectors based on InAsSb with high operating temperatures

Abstract

Bibliographical note

Funding

Keywords

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