XBn and XBp Detectors Based on Type II Superlattices

P. C. Klipstein; Y. Benny; Y. Cohen; N. Fraenkel; S. Gliksman; A. Glozman; N. Hadari; I. Hirsh; M. Katz; O. Klin; L. Langof; I. Lukomsky; I. Marderfeld; M. Nitzani; D. Rakhmilevich; S. Shusterman; I. Shafir; I. Shtrichman; N. Sicron; N. Snapi; N. Yaron

doi:10.1007/s11664-022-09661-0

XBn and XBp Detectors Based on Type II Superlattices

P. C. Klipstein, Y. Benny, Y. Cohen, N. Fraenkel, S. Gliksman, A. Glozman, N. Hadari, I. Hirsh, M. Katz, O. Klin, L. Langof, I. Lukomsky, I. Marderfeld, M. Nitzani, D. Rakhmilevich, S. Shusterman, I. Shafir, I. Shtrichman, N. Sicron, N. SnapiN. Yaron

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

XBn and XBp barrier detectors offer diffusion-limited dark current and high operating temperatures. Type II superlattices (T2SLs) based on either InAs/GaSb or InAs/InAsSb are ideal for their fabrication for two important reasons. First, their bandgaps can be matched to the mid-wave infrared (MWIR) or long-wave infrared (LWIR) transparency ranges of the atmosphere, and second, their mini-band edges can be designed to create a large barrier for majority carriers and a negligible barrier for minority carriers, two requirements necessary for successful device operation. The main challenges are a short lifetime for both types of minority carrier in InAs/GaSb T2SLs, and non-metallic hole conductivity in both types of T2SL leading to a very low hole mobility. In this work we demonstrate how these challenges can be met, by exploiting high electron mobilities in InAs/GaSb T2SLs, and a long Auger-limited hole lifetime in the gallium-free T2SL for doping levels below 10¹⁵ cm⁻³. Full MWIR focal plane array (FPA) operating temperatures are presented close to 130 K, and robust LWIR FPA operation is demonstrated at 77 K.

Original language	English
Pages (from-to)	4752-4757
Number of pages	6
Journal	Journal of Electronic Materials
Volume	51
Issue number	9
DOIs	https://doi.org/10.1007/s11664-022-09661-0
State	Published - Sep 2022
Externally published	Yes

Bibliographical note

Funding Information:
The authors acknowledge technical support from Mr. I. Bogoslavski, Mr. Y. Caracenti, Mr. A. Franco, Mr. M. Grinberg, Mr. S. Greenberg, Mr. D. Gur, Ms. N. Hazan, Ms. L. Krivolapov, Ms. M. Menahem, Ms. H. Moshe, Mr. Y. Osmo, Mr. E. Sandik, and Ms. H. Schanzer, and who have all contributed to the successful growth, processing, packaging and characterization of the materials and devices.

Publisher Copyright:
© 2022, The Minerals, Metals & Materials Society.

Keywords

LWIR
MWIR
XBn
XBp
background-limited performance
barrier detector
infrared
type II superlattice

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10.1007/s11664-022-09661-0

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Klipstein, P. C., Benny, Y., Cohen, Y., Fraenkel, N., Gliksman, S., Glozman, A., Hadari, N., Hirsh, I., Katz, M., Klin, O., Langof, L., Lukomsky, I., Marderfeld, I., Nitzani, M., Rakhmilevich, D., Shusterman, S., Shafir, I., Shtrichman, I., Sicron, N., ... Yaron, N. (2022). XBn and XBp Detectors Based on Type II Superlattices. Journal of Electronic Materials, 51(9), 4752-4757. https://doi.org/10.1007/s11664-022-09661-0

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abstract = "XBn and XBp barrier detectors offer diffusion-limited dark current and high operating temperatures. Type II superlattices (T2SLs) based on either InAs/GaSb or InAs/InAsSb are ideal for their fabrication for two important reasons. First, their bandgaps can be matched to the mid-wave infrared (MWIR) or long-wave infrared (LWIR) transparency ranges of the atmosphere, and second, their mini-band edges can be designed to create a large barrier for majority carriers and a negligible barrier for minority carriers, two requirements necessary for successful device operation. The main challenges are a short lifetime for both types of minority carrier in InAs/GaSb T2SLs, and non-metallic hole conductivity in both types of T2SL leading to a very low hole mobility. In this work we demonstrate how these challenges can be met, by exploiting high electron mobilities in InAs/GaSb T2SLs, and a long Auger-limited hole lifetime in the gallium-free T2SL for doping levels below 1015 cm−3. Full MWIR focal plane array (FPA) operating temperatures are presented close to 130 K, and robust LWIR FPA operation is demonstrated at 77 K.",

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author = "Klipstein, {P. C.} and Y. Benny and Y. Cohen and N. Fraenkel and S. Gliksman and A. Glozman and N. Hadari and I. Hirsh and M. Katz and O. Klin and L. Langof and I. Lukomsky and I. Marderfeld and M. Nitzani and D. Rakhmilevich and S. Shusterman and I. Shafir and I. Shtrichman and N. Sicron and N. Snapi and N. Yaron",

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month = sep,

doi = "10.1007/s11664-022-09661-0",

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Klipstein, PC, Benny, Y, Cohen, Y, Fraenkel, N, Gliksman, S, Glozman, A, Hadari, N, Hirsh, I, Katz, M, Klin, O, Langof, L, Lukomsky, I, Marderfeld, I, Nitzani, M, Rakhmilevich, D, Shusterman, S, Shafir, I, Shtrichman, I, Sicron, N, Snapi, N & Yaron, N 2022, 'XBn and XBp Detectors Based on Type II Superlattices', Journal of Electronic Materials, vol. 51, no. 9, pp. 4752-4757. https://doi.org/10.1007/s11664-022-09661-0

TY - JOUR

T1 - XBn and XBp Detectors Based on Type II Superlattices

AU - Klipstein, P. C.

AU - Benny, Y.

AU - Cohen, Y.

AU - Fraenkel, N.

AU - Gliksman, S.

AU - Glozman, A.

AU - Hadari, N.

AU - Hirsh, I.

AU - Katz, M.

AU - Klin, O.

AU - Langof, L.

AU - Lukomsky, I.

AU - Marderfeld, I.

AU - Nitzani, M.

AU - Rakhmilevich, D.

AU - Shusterman, S.

AU - Shafir, I.

AU - Shtrichman, I.

AU - Sicron, N.

AU - Snapi, N.

AU - Yaron, N.

PY - 2022/9

Y1 - 2022/9

N2 - XBn and XBp barrier detectors offer diffusion-limited dark current and high operating temperatures. Type II superlattices (T2SLs) based on either InAs/GaSb or InAs/InAsSb are ideal for their fabrication for two important reasons. First, their bandgaps can be matched to the mid-wave infrared (MWIR) or long-wave infrared (LWIR) transparency ranges of the atmosphere, and second, their mini-band edges can be designed to create a large barrier for majority carriers and a negligible barrier for minority carriers, two requirements necessary for successful device operation. The main challenges are a short lifetime for both types of minority carrier in InAs/GaSb T2SLs, and non-metallic hole conductivity in both types of T2SL leading to a very low hole mobility. In this work we demonstrate how these challenges can be met, by exploiting high electron mobilities in InAs/GaSb T2SLs, and a long Auger-limited hole lifetime in the gallium-free T2SL for doping levels below 1015 cm−3. Full MWIR focal plane array (FPA) operating temperatures are presented close to 130 K, and robust LWIR FPA operation is demonstrated at 77 K.

AB - XBn and XBp barrier detectors offer diffusion-limited dark current and high operating temperatures. Type II superlattices (T2SLs) based on either InAs/GaSb or InAs/InAsSb are ideal for their fabrication for two important reasons. First, their bandgaps can be matched to the mid-wave infrared (MWIR) or long-wave infrared (LWIR) transparency ranges of the atmosphere, and second, their mini-band edges can be designed to create a large barrier for majority carriers and a negligible barrier for minority carriers, two requirements necessary for successful device operation. The main challenges are a short lifetime for both types of minority carrier in InAs/GaSb T2SLs, and non-metallic hole conductivity in both types of T2SL leading to a very low hole mobility. In this work we demonstrate how these challenges can be met, by exploiting high electron mobilities in InAs/GaSb T2SLs, and a long Auger-limited hole lifetime in the gallium-free T2SL for doping levels below 1015 cm−3. Full MWIR focal plane array (FPA) operating temperatures are presented close to 130 K, and robust LWIR FPA operation is demonstrated at 77 K.

KW - LWIR

KW - MWIR

KW - XBn

KW - XBp

KW - background-limited performance

KW - barrier detector

KW - infrared

KW - type II superlattice

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

XBn and XBp Detectors Based on Type II Superlattices

Abstract

Bibliographical note

Keywords

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