TY - JOUR
T1 - Wide-dynamic-range CMOS image sensors - Comparative performance analysis
AU - Spivak, Arthur
AU - Belenky, Alexander
AU - Fish, Alexander
AU - Yadid-Pecht, Orly
PY - 2009
Y1 - 2009
N2 - A large variety of solutions for widening the dynamic range (DR) of CMOS image sensors has been proposed throughout the years. We propose a set of criteria upon which an effective comparative analysis of the performance of wide-DR (WDR) sensors can be done. Sensors for WDR are divided into seven categories: 1) companding sensors; 2) multimode sensors; 3) clipping sensors; 4) frequency-based sensors; 5) time-to-saturation (time-to-first spike) sensors; 6) global-control-over-the-integration-time sensors; and 7) autonomous-control-over-the-integration-time sensors. The comparative analysis for each category is based upon the quantitative assessments of the following parameters: signal-to-noise ratio, DR extension, noise floor, minimal transistor count, and sensitivity. These parameters are assessed using consistent assumptions and definitions, which are common to all WDR sensor categories. The advantages and disadvantages of each category in the sense of power consumption and data rate are discussed qualitatively. The influence of technology advancements on the proposed set of criteria is discussed as well.
AB - A large variety of solutions for widening the dynamic range (DR) of CMOS image sensors has been proposed throughout the years. We propose a set of criteria upon which an effective comparative analysis of the performance of wide-DR (WDR) sensors can be done. Sensors for WDR are divided into seven categories: 1) companding sensors; 2) multimode sensors; 3) clipping sensors; 4) frequency-based sensors; 5) time-to-saturation (time-to-first spike) sensors; 6) global-control-over-the-integration-time sensors; and 7) autonomous-control-over-the-integration-time sensors. The comparative analysis for each category is based upon the quantitative assessments of the following parameters: signal-to-noise ratio, DR extension, noise floor, minimal transistor count, and sensitivity. These parameters are assessed using consistent assumptions and definitions, which are common to all WDR sensor categories. The advantages and disadvantages of each category in the sense of power consumption and data rate are discussed qualitatively. The influence of technology advancements on the proposed set of criteria is discussed as well.
KW - Active pixel sensor (APS)
KW - CMOS image sensors (CIS)
KW - Dynamic range (DR)
KW - Noise floor (NF)
KW - Sensitivity
KW - Sensors
KW - Signal-to-noise ratio (SNR)
UR - http://www.scopus.com/inward/record.url?scp=70350702657&partnerID=8YFLogxK
U2 - 10.1109/ted.2009.2030599
DO - 10.1109/ted.2009.2030599
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:70350702657
SN - 0018-9383
VL - 56
SP - 2446
EP - 2461
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 11
ER -