Voltage-Divider-Based Binary and Ternary Content-Addressable Memory (CAM) Exploiting Double-Barrier Magnetic Tunnel Junction

Alessandro Bedoya, Esteban Astudillo, Ramiro Taco, Luis Miguel Prócel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The efficiency of massively parallel search operations, along with the non-volatile (NV) capability of magnetic tunnel junction (MTJ), has raised significant interest for NV content-addressable memories (NV-CAMs). We propose an eight-transistor-two-MTJ (8T2MTJ) NV-TCAM based on the voltage-divider configuration, and the use of skew-butter to drive the response of the search signal. The design was evaluated under exhaustive Monte Carlo simulations. The 144-bit NV-TCAM presents demonstrates competitive performance compared to the current state-of-the-art designs. In particular, when compared to the best state-of-the-art voltage-divider alternative, the proposed design offers better search time (62.47%). In comparison to other topologies, the proposed design presents less (48.6%) SER, reduced (2.17×) search energy per bit, and better (60.43%) cell area footprint. This, at the only cost of slight increase in search time. These findings highlight the promising characteristics of our proposed design and their potential for high-density, and reliable search operations of NV-CAMs.

Original languageEnglish
Title of host publicationECTM 2023 - 2023 IEEE 7th Ecuador Technical Chapters Meeting
EditorsDavid Rivas Lalaleo, Manuel Ignacio Ayala Chauvin
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350338232
DOIs
StatePublished - 2023
Externally publishedYes
Event7th IEEE Ecuador Technical Chapters Meeting, ECTM 2023 - Ambato, Ecuador
Duration: 10 Oct 202313 Oct 2023

Publication series

NameECTM 2023 - 2023 IEEE 7th Ecuador Technical Chapters Meeting

Conference

Conference7th IEEE Ecuador Technical Chapters Meeting, ECTM 2023
Country/TerritoryEcuador
CityAmbato
Period10/10/2313/10/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

  • DMTJ
  • MTJ
  • Ternary Content-Addressable Memory (TCAM)
  • voltage-divider

Fingerprint

Dive into the research topics of 'Voltage-Divider-Based Binary and Ternary Content-Addressable Memory (CAM) Exploiting Double-Barrier Magnetic Tunnel Junction'. Together they form a unique fingerprint.

Cite this