Vapour transport deposition of fluorographene oxide films and electro-optical device applications

Rahul Sharma, Ravi K. Biroju, Ofer Sinai, Hagai Cohen, Krishna Rani Sahoo, Vlada Artel, Hadas Alon, Adi Levi, A. Subrahmanyam, Wolfgang Theis, Doron Naveh, Tharangattu N. Narayanan

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Fluorographene is one of the most interesting 2D materials owing to its span of electronic properties, from a conductor to wide-gap insulator, controlled by the compositional carbon to fluorine ratio. Unlike the chemically inert graphene, fluorographene is recognized for its rich chemistry, particularly at ambient, allowing tailoring its physical properties. Here, we report on single step, catalyst free, wafer-scale synthesis of fluorographene oxide (FGO) ultra-thin films (∼4 nm thickness) by physical vapour deposition. The FGO, possessing 7% fluorine content, comprises few-nanometer domains of sp2-sp3 carbon with high thermal stability, as confirmed by several analytical methods. We show that FGO can be utilized as an active hetero-layer on a few-layer MoS2 field effect transistor (FET), significantly improving the performance of MoS2 optoelectronic devices with an extended spectral response towards the near infrared and responsivity of up to 6 A/W. The FGO-MoS2 band alignment, as derived from the measured work function of FGO (4.69 eV), indicates a plausible photoconductive gain mechanism with a fast transit time of holes mediated by FGO quasi-continuous defect states.

Original languageEnglish
Pages (from-to)387-395
Number of pages9
JournalApplied Materials Today
StatePublished - Dec 2018

Bibliographical note

Publisher Copyright:
© 2018 Elsevier Ltd


  • Electronic transport
  • Field effect transistor
  • Fluorographene oxide
  • Photodetector
  • Physical vapour deposition
  • Wafer scale synthesis


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