UV assisted oxidation and nitridation of hafnia based thin films for alternate gate dielectric applications

K. Ramani, C. R. Essary, V. Craciun, R. K. Singh

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The synergistic effects of NH 3 ambient and ultraviolet illumination on the dielectric properties of hafnia based gate dielectrics are reported in this paper. The films were processed at relatively low temperatures (∼400 °C) by pulsed laser ablation and UV oxidation technique. UV illumination and the NH 3 ambient created a thin and a denser interfacial layer (at the film-Si interface) comprised of Hf{single bond}Si{single bond}O{single bond}N bonding. As a result of the interfacial layer modification, a leakage current density lower than 10 -4 A/cm 2 and a dielectric constant of ∼21.7 were extracted from the best samples processed in NH 3 and under UV illumination. The nitrogen doped HfO 2 also exhibited a thinner interfacial layer (∼12 Å) in comparison to the films processed without NH 3 ambient.

Original languageEnglish
Pages (from-to)6493-6498
Number of pages6
JournalApplied Surface Science
Volume253
Issue number15
DOIs
StatePublished - 30 May 2007
Externally publishedYes

Keywords

  • Hafnia
  • Hf{single bond}Si{single bond}O{single bond}N
  • UV assisted oxidation

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