Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications
- Asaf Albo
- , Catherine Cytermann
- , Gad Bahir
- , Dan Fekete
- Technion-Israel Institute of Technology
Research output: Contribution to journal › Article › peer-review
18
Scopus
citations