Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications

Asaf Albo, Catherine Cytermann, Gad Bahir, Dan Fekete

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16 Scopus citations

Abstract

We have investigated the composition and optical properties of GaInAsN/GaAs single quantum wells grown using metal organic chemical vapor epitaxy at 500 °C. Using time-of-flight secondary ion mass spectrometry and photoluminescence spectroscopy, we have shown the presence of a 1-2 nm thick nitrogen-rich interfacial layer at the first interface grown. The inhomogeneous asymmetric distribution of nitrogen atoms along the growth direction is attributed to the dominance of surface kinetics, nonlinear dependence of N incorporation on In content, and the strain gradient effect on the effective diffusion of N. We have utilized this finding to grow high quality quantum wells.

Original languageEnglish
Article number141102
JournalApplied Physics Letters
Volume96
Issue number14
DOIs
StatePublished - 2010
Externally publishedYes

Bibliographical note

Funding Information:
This work was partially supported by a Technion-Russell-Berrie Nanotechnology, Grant No. 2009101.

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