Using modulation spectroscopy measurements of the stark effect in MOVPE grown GaAs/(AlGa)As multiple quantum wells to observe monolayer thickness changes in wells of up to 158Å in width

A. J. Shields; P. C. Klipstein; J. S. Roberts; C. Button

doi:10.1016/0749-6036(90)90235-y

Using modulation spectroscopy measurements of the stark effect in MOVPE grown GaAs/(AlGa)As multiple quantum wells to observe monolayer thickness changes in wells of up to 158Å in width

A. J. Shields, P. C. Klipstein, J. S. Roberts, C. Button

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have measured complementary spectra at 17K of electro-reflectance (ER) and electro-transmission (ET), photocurrent (PC) and photoabsorption (PA), all as a function of electric field, on two GaAs/A1_0.3Ga_0.7 As multiple quantum wells (MQWs), with 60Å barriers and either 87Å or 158Å wells. Using PC or PA, we detect very weak splittings of the principal excitonic features. Using the modulation techniques (ER or ET), the splittings exhibit a much stronger signature, which can be followed up to large values of electric field applied perpendicular to the wells. We deduce that the splittings are caused by monolayer changes in well width at clearly defined depths in the MQW stack. The imperfections of the stack have important consequences for MOVPE-grown optoelectronic devices based on MQWs.

Original language	English
Pages (from-to)	409-414
Number of pages	6
Journal	Superlattices and Microstructures
Volume	7
Issue number	4
DOIs	https://doi.org/10.1016/0749-6036(90)90235-y
State	Published - 1990
Externally published	Yes

Bibliographical note

Funding Information:
London, for help in processing the samples. We thank B.A. Joyce and D.D. Vvedensky for useful discussions. The work was funded by the Science and Engineering Research Council. A.J.S. also thanks the Department of Education for Northern Ireland, and the Royal Signals and Radar Establishnrent. Halvern, for financial support.

Funding

London, for help in processing the samples. We thank B.A. Joyce and D.D. Vvedensky for useful discussions. The work was funded by the Science and Engineering Research Council. A.J.S. also thanks the Department of Education for Northern Ireland, and the Royal Signals and Radar Establishnrent. Halvern, for financial support.

Funders	Funder number
Science and Engineering Research Council

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10.1016/0749-6036(90)90235-y

Cite this

@article{a723e36364f540c39e3e6c265d0d17de,

title = "Using modulation spectroscopy measurements of the stark effect in MOVPE grown GaAs/(AlGa)As multiple quantum wells to observe monolayer thickness changes in wells of up to 158{\AA} in width",

abstract = "We have measured complementary spectra at 17K of electro-reflectance (ER) and electro-transmission (ET), photocurrent (PC) and photoabsorption (PA), all as a function of electric field, on two GaAs/A10.3Ga0.7 As multiple quantum wells (MQWs), with 60{\AA} barriers and either 87{\AA} or 158{\AA} wells. Using PC or PA, we detect very weak splittings of the principal excitonic features. Using the modulation techniques (ER or ET), the splittings exhibit a much stronger signature, which can be followed up to large values of electric field applied perpendicular to the wells. We deduce that the splittings are caused by monolayer changes in well width at clearly defined depths in the MQW stack. The imperfections of the stack have important consequences for MOVPE-grown optoelectronic devices based on MQWs.",

author = "Shields, {A. J.} and Klipstein, {P. C.} and Roberts, {J. S.} and C. Button",

note = "Funding Information: London, for help in processing the samples. We thank B.A. Joyce and D.D. Vvedensky for useful discussions. The work was funded by the Science and Engineering Research Council. A.J.S. also thanks the Department of Education for Northern Ireland, and the Royal Signals and Radar Establishnrent. Halvern, for financial support.",

year = "1990",

doi = "10.1016/0749-6036(90)90235-y",

language = "אנגלית",

volume = "7",

pages = "409--414",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4",

}

Using modulation spectroscopy measurements of the stark effect in MOVPE grown GaAs/(AlGa)As multiple quantum wells to observe monolayer thickness changes in wells of up to 158Å in width. / Shields, A. J.; Klipstein, P. C.; Roberts, J. S. et al.
In: Superlattices and Microstructures, Vol. 7, No. 4, 1990, p. 409-414.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Using modulation spectroscopy measurements of the stark effect in MOVPE grown GaAs/(AlGa)As multiple quantum wells to observe monolayer thickness changes in wells of up to 158Å in width

AU - Shields, A. J.

AU - Klipstein, P. C.

AU - Roberts, J. S.

AU - Button, C.

N1 - Funding Information: London, for help in processing the samples. We thank B.A. Joyce and D.D. Vvedensky for useful discussions. The work was funded by the Science and Engineering Research Council. A.J.S. also thanks the Department of Education for Northern Ireland, and the Royal Signals and Radar Establishnrent. Halvern, for financial support.

PY - 1990

Y1 - 1990

N2 - We have measured complementary spectra at 17K of electro-reflectance (ER) and electro-transmission (ET), photocurrent (PC) and photoabsorption (PA), all as a function of electric field, on two GaAs/A10.3Ga0.7 As multiple quantum wells (MQWs), with 60Å barriers and either 87Å or 158Å wells. Using PC or PA, we detect very weak splittings of the principal excitonic features. Using the modulation techniques (ER or ET), the splittings exhibit a much stronger signature, which can be followed up to large values of electric field applied perpendicular to the wells. We deduce that the splittings are caused by monolayer changes in well width at clearly defined depths in the MQW stack. The imperfections of the stack have important consequences for MOVPE-grown optoelectronic devices based on MQWs.

AB - We have measured complementary spectra at 17K of electro-reflectance (ER) and electro-transmission (ET), photocurrent (PC) and photoabsorption (PA), all as a function of electric field, on two GaAs/A10.3Ga0.7 As multiple quantum wells (MQWs), with 60Å barriers and either 87Å or 158Å wells. Using PC or PA, we detect very weak splittings of the principal excitonic features. Using the modulation techniques (ER or ET), the splittings exhibit a much stronger signature, which can be followed up to large values of electric field applied perpendicular to the wells. We deduce that the splittings are caused by monolayer changes in well width at clearly defined depths in the MQW stack. The imperfections of the stack have important consequences for MOVPE-grown optoelectronic devices based on MQWs.

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Using modulation spectroscopy measurements of the stark effect in MOVPE grown GaAs/(AlGa)As multiple quantum wells to observe monolayer thickness changes in wells of up to 158Å in width

Abstract

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