Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs

Keyphrases

• Gate Voltage 100%
• Voltage Dependence 100%
• Channel Thickness 100%
• TCAD Simulation 100%
• SOI MOSFET 100%
• Mobility Model 100%
• TCAD Tool 100%
• Order of Magnitude 50%
• Ultra-thin Body 50%
• I-V Characteristics 50%
• Channel Gating 50%
• Nanoscale Devices 50%
• Thickness Ratio 50%
• Semi-empirical Methods 50%
• Series Resistance 50%
• Transfer Characteristics 50%
• MOSFET Device 50%
• Device Sharing 50%
• Mobility Degradation 50%
• Model Following 50%
• TCAD Modeling 50%
• L-ratio 50%
• Mobility Values 50%
• Technology Advancement 50%

Engineering

• Limitations 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Voltage 100%
• Nanoscale 100%
• Simulated Result 50%
• Series Resistance 50%
• Thickness Ratio 50%
• Current-Voltage Characteristic 50%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Current-Voltage Characteristic 50%