Unification of the metal-insulator transitions driven by the impurity concentration and by the magnetic field in arsenic-doped germanium

I. Shlimak; M. Kaveh; R. Ussyshkin; V. Ginodman; L. Resnick

doi:10.1103/physrevb.55.1303

Unification of the metal-insulator transitions driven by the impurity concentration and by the magnetic field in arsenic-doped germanium

I. Shlimak
, M. Kaveh
, R. Ussyshkin
, V. Ginodman
, L. Resnick

Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We show that one can unify the scaling behavior of the conductivity in Ge:As in the vicinity of the metal-insulator transition driven either by the concentration of impurities N or by the magnetic field B by introducing a new scaling variable U=[(N/(Formula presented))-(B/(Formula presented))-1], where both the critical impurity concentration (Formula presented) and the characteristic magnetic field (Formula presented) are constant.

Original language	English
Pages (from-to)	1303-1305
Number of pages	3
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	55
Issue number	3
DOIs	https://doi.org/10.1103/physrevb.55.1303
State	Published - 1997

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abstract = "We show that one can unify the scaling behavior of the conductivity in Ge:As in the vicinity of the metal-insulator transition driven either by the concentration of impurities N or by the magnetic field B by introducing a new scaling variable U=[(N/(Formula presented))-(B/(Formula presented))-1], where both the critical impurity concentration (Formula presented) and the characteristic magnetic field (Formula presented) are constant.",

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AU - Ginodman, V.

AU - Resnick, L.

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AB - We show that one can unify the scaling behavior of the conductivity in Ge:As in the vicinity of the metal-insulator transition driven either by the concentration of impurities N or by the magnetic field B by introducing a new scaling variable U=[(N/(Formula presented))-(B/(Formula presented))-1], where both the critical impurity concentration (Formula presented) and the characteristic magnetic field (Formula presented) are constant.

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Unification of the metal-insulator transitions driven by the impurity concentration and by the magnetic field in arsenic-doped germanium

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