Ultraviolet light enhancement of Ta2O5 dry etch rates

K. P. Lee; H. Cho; R. K. Singh; S. J. Pearton; C. Hobbs; P. Tobin

doi:10.1116/1.591240

Ultraviolet light enhancement of Ta₂O₅ dry etch rates

K. P. Lee
, H. Cho
, R. K. Singh
, S. J. Pearton
, C. Hobbs
, P. Tobin

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The dry etch rates in Ta₂O₅ were enhanced by using ultraviolet (UV) light irradiation during inductively coupled plasma (ICP) etching. The material was etched both in SF₆/Ar and Cl₂/Ar plasma chemistries. The increased in etch rates are assumed to be due to the photoassisted desorption of the TaCl_x and TaF_x etch products.

Original language	English
Pages (from-to)	293-295
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	1
DOIs	https://doi.org/10.1116/1.591240
State	Published - Jan 2000
Externally published	Yes

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title = "Ultraviolet light enhancement of Ta2O5 dry etch rates",

abstract = "The dry etch rates in Ta2O5 were enhanced by using ultraviolet (UV) light irradiation during inductively coupled plasma (ICP) etching. The material was etched both in SF6/Ar and Cl2/Ar plasma chemistries. The increased in etch rates are assumed to be due to the photoassisted desorption of the TaClx and TaFx etch products.",

author = "Lee, \{K. P.\} and H. Cho and Singh, \{R. K.\} and Pearton, \{S. J.\} and C. Hobbs and P. Tobin",

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AU - Lee, K. P.

AU - Cho, H.

AU - Singh, R. K.

AU - Pearton, S. J.

AU - Hobbs, C.

AU - Tobin, P.

PY - 2000/1

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N2 - The dry etch rates in Ta2O5 were enhanced by using ultraviolet (UV) light irradiation during inductively coupled plasma (ICP) etching. The material was etched both in SF6/Ar and Cl2/Ar plasma chemistries. The increased in etch rates are assumed to be due to the photoassisted desorption of the TaClx and TaFx etch products.

AB - The dry etch rates in Ta2O5 were enhanced by using ultraviolet (UV) light irradiation during inductively coupled plasma (ICP) etching. The material was etched both in SF6/Ar and Cl2/Ar plasma chemistries. The increased in etch rates are assumed to be due to the photoassisted desorption of the TaClx and TaFx etch products.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Ultraviolet light enhancement of Ta₂O₅ dry etch rates

Abstract

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