Ultraviolet light enhancement of Ta2O5 dry etch rates

K. P. Lee, H. Cho, R. K. Singh, S. J. Pearton, C. Hobbs, P. Tobin

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


The dry etch rates in Ta2O5 were enhanced by using ultraviolet (UV) light irradiation during inductively coupled plasma (ICP) etching. The material was etched both in SF6/Ar and Cl2/Ar plasma chemistries. The increased in etch rates are assumed to be due to the photoassisted desorption of the TaClx and TaFx etch products.

Original languageEnglish
Pages (from-to)293-295
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number1
StatePublished - Jan 2000
Externally publishedYes


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