Ultralow voltage finFET-versus TFET-based STT-MRAM cells for iot applications

Esteban Garzón, Marco Lanuzza, Ramiro Taco, Sebastiano Strangio

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Spin-transfer torque magnetic tunnel junction (STT-MTJ) based on double-barrier magnetic tunnel junction (DMTJ) has shown promising characteristics to define low-power non-volatile memories. This, along with the combination of tunnel FET (TFET) technology, could enable the design of ultralow-power/ultralow-energy STT magnetic RAMs (STT-MRAMs) for future Internet of Things (IoT) applications. This paper presents the comparison between FinFET-and TFET-based STT-MRAM bitcells operating at ultralow voltages. Our study is performed at the bitcell level by considering a DMTJ with two reference layers and exploiting either FinFET or TFET devices as cell selectors. Although ultralow-voltage operation occurs at the expense of reduced reading voltage sensing margins, simulations results show that TFET-based solutions are more resilient to process variations and can operate at ultralow voltages (<0.5 V), while showing energy savings of 50% and faster write switching of 60%.

Original languageEnglish
Article number1756
JournalElectronics (Switzerland)
Volume10
Issue number15
DOIs
StatePublished - Aug 2021
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

  • Double-barrier magnetic tunnel junction (DMTJ)
  • STT-MRAM
  • Tunnel-FET (TFET)
  • Ultralow voltage

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