Ultralow Power System-on-Chip SRAM Characterization by Alpha and Neutron Irradiation

Avner Haran; Nir M. Yitzhak; Eran Mazal-Tov; Eitan Keren; David David; Nati Refaeli; Enrico Preziosi; Roberto Senesi; Carlo Cazzaniga; Christopher D. Frost; Tzach Hadas; Uzi Zangi; Carla Andreani

doi:10.1109/TNS.2021.3112622

Ultralow Power System-on-Chip SRAM Characterization by Alpha and Neutron Irradiation

Avner Haran, Nir M. Yitzhak, Eran Mazal-Tov, Eitan Keren, David David, Nati Refaeli, Enrico Preziosi, Roberto Senesi, Carlo Cazzaniga, Christopher D. Frost, Tzach Hadas, Uzi Zangi, Carla Andreani

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The static random access memory (SRAM) of an ultralow power system-on-chip (SoC) was tested for single-event upsets (SEUs) using alpha particles and neutron beam sources. The measurements are compared to those of an SRAM-based field-programmable gate array (FPGA), built on a similar technology node. The results reveal opposite trends in the two devices regarding the upsets of the logic states, as well as differences in the dependence of SEU cross section (CS) on the operation voltage. The sensitivity of the SoC SRAM to multiple bit upsets with the different radiation sources is analyzed as well. The results demonstrate that the unique SoC design, which enables complete near/subthreshold operation, does not compromise the SoC bit upset tolerance compared to devices of similar technology node which operate at higher voltages.

Original language	English
Pages (from-to)	2598-2608
Number of pages	11
Journal	IEEE Transactions on Nuclear Science
Volume	68
Issue number	11
DOIs	https://doi.org/10.1109/TNS.2021.3112622
State	Published - 1 Nov 2021
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Alpha particles
multiple bit upset (MBU)
neutron irradiation
single-event upset (SEU)
static random access memory (SRAM)
subthreshold voltage
system-on-chip (SoC)

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10.1109/TNS.2021.3112622

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title = "Ultralow Power System-on-Chip SRAM Characterization by Alpha and Neutron Irradiation",

abstract = "The static random access memory (SRAM) of an ultralow power system-on-chip (SoC) was tested for single-event upsets (SEUs) using alpha particles and neutron beam sources. The measurements are compared to those of an SRAM-based field-programmable gate array (FPGA), built on a similar technology node. The results reveal opposite trends in the two devices regarding the upsets of the logic states, as well as differences in the dependence of SEU cross section (CS) on the operation voltage. The sensitivity of the SoC SRAM to multiple bit upsets with the different radiation sources is analyzed as well. The results demonstrate that the unique SoC design, which enables complete near/subthreshold operation, does not compromise the SoC bit upset tolerance compared to devices of similar technology node which operate at higher voltages.",

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AU - Yitzhak, Nir M.

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AU - Keren, Eitan

AU - David, David

AU - Refaeli, Nati

AU - Preziosi, Enrico

AU - Senesi, Roberto

AU - Cazzaniga, Carlo

AU - Frost, Christopher D.

AU - Hadas, Tzach

AU - Zangi, Uzi

AU - Andreani, Carla

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Ultralow Power System-on-Chip SRAM Characterization by Alpha and Neutron Irradiation

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