Abstract
An ultrahigh infrared (IR) photoresponse is reported in granular titanium sesquioxide (Ti2O3), also known as Mott insulator, at its semiconductor−metal transition temperature of 400 K. Ultrahigh photoresponse is obtained due to the IR radiation induced thermal expansion in Ti-Ti bonding causing a destabilization and depopulation of the band in its metallic state. Moreover, a high voltage responsivity of 1379 V W−1 is achieved, which is significantly higher than any report so far. Both in situ Raman spectroscopy and X-ray diffraction measurements reveal an important insight beyond the semiconductor−metal transition in Ti2O3. Moreover, this study opens avenues to evaluate unprecedented properties of Mott insulators in their transition states.
| Original language | English |
|---|---|
| Article number | 2001091 |
| Journal | Advanced Materials Interfaces |
| Volume | 7 |
| Issue number | 20 |
| DOIs | |
| State | Published - 1 Oct 2020 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2020 Wiley-VCH GmbH
Funding
The A.M. and S.N. acknowledge funding support from Ministry of Human Resource Development (MHRD), Ministry of Electronics and Information Technology (MeitY), and Department of Science and Technology (DST) Nano Mission through NNetRA. The authors would like to thank Prof. Chandan Srivastava (Materials Engineering, IISc) for providing the ball‐milling facility. The authors would also like to thank Prof. Praveen Kumar and Dipali Shivaji Sonawane (Materials Engineering, IISc) for the scanning electron microscopy (SEM) image. The authors also acknowledge Prof. Rajeev Ranjan (Materials Engineering, IISc) for providing the temperature‐dependent XRD facility. The A.M. and S.N. acknowledge funding support from Ministry of Human Resource Development (MHRD), Ministry of Electronics and Information Technology (MeitY), and Department of Science and Technology (DST) Nano Mission through NNetRA. The authors would like to thank Prof. Chandan Srivastava (Materials Engineering, IISc) for providing the ball-milling facility. The authors would also like to thank Prof. Praveen Kumar and Dipali Shivaji Sonawane (Materials Engineering, IISc) for the scanning electron microscopy (SEM) image. The authors also acknowledge Prof. Rajeev Ranjan (Materials Engineering, IISc) for providing the temperature-dependent XRD facility.
| Funders | Funder number |
|---|---|
| Indian Institute of Science | |
| Department of Science and Technology, Ministry of Science and Technology, India | |
| Ministry of Human Resource Development | |
| Department of Science and Technology, Government of Kerala | |
| Ministry of Electronics and Information technology |
Keywords
- Mott-insulators
- photoresponse
- titanium sesquioxide (Ti O )