Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO2

J. G. Ramírez; Rainer Schmidt; A. Sharoni; M. E. Gómez; Ivan K. Schuller; Edgar J. Patiño

doi:10.1063/1.4792052

Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO₂

J. G. Ramírez, Rainer Schmidt, A. Sharoni, M. E. Gómez, Ivan K. Schuller, Edgar J. Patiño

Department of Physics

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Temperature dependent dielectric spectroscopy measurements on vanadium dioxide thin films allow us to distinguish between the resistive, capacitive, and inductive contributions to the impedance across the metal-insulator transition (MIT). We developed a single, universal, equivalent circuit model to describe the dielectric behavior above and below the MIT. Our model takes account of phase-coexistence of metallic and insulating regions. We find evidence for the existence at low temperature of ultra-thin threads as described by a resistor-inductor element. A conventional resistor-capacitor element connected in parallel accounts for the insulating phase and the dielectric relaxation.

Original language	English
Article number	063110
Journal	Applied Physics Letters
Volume	102
Issue number	6
DOIs	https://doi.org/10.1063/1.4792052
State	Published - 11 Feb 2013

Bibliographical note

Funding Information:
This work was supported by AFOSR Grant No. FA9550-12-1-0381, COLCIENCIAS, CENM and “El Patrimonio Autónomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnología y la Innovación Francisco José de Caldas” Contract RC—No. 275-2011, and ISF Grant No. 727/11. R.S. wishes to acknowledge a Ramón y Cajal Fellowship from the Ministerio de Ciencia e Innovación (MICINN) in Spain. E.J.P. wishes to acknowledge “Programa Nacional de Ciencias Básicas” COLCIENCIAS (No. 120452128168). During the publication process of this manuscript, out-of-plane impedance measurements were published on VO films grown on TiO substrates. These results also imply the coexistence of metallic and insulating phases. 2 2

Funding

This work was supported by AFOSR Grant No. FA9550-12-1-0381, COLCIENCIAS, CENM and “El Patrimonio Autónomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnología y la Innovación Francisco José de Caldas” Contract RC—No. 275-2011, and ISF Grant No. 727/11. R.S. wishes to acknowledge a Ramón y Cajal Fellowship from the Ministerio de Ciencia e Innovación (MICINN) in Spain. E.J.P. wishes to acknowledge “Programa Nacional de Ciencias Básicas” COLCIENCIAS (No. 120452128168). During the publication process of this manuscript, out-of-plane impedance measurements were published on VO films grown on TiO substrates. These results also imply the coexistence of metallic and insulating phases. 2 2

Funders	Funder number
CENM	275-2011
Air Force Office of Scientific Research	FA9550-12-1-0381
Departamento Administrativo de Ciencia, Tecnología e Innovación (COLCIENCIAS)
Israel Science Foundation	727/11
Ministerio de Ciencia e Innovación

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10.1063/1.4792052

Cite this

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title = "Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO2",

abstract = "Temperature dependent dielectric spectroscopy measurements on vanadium dioxide thin films allow us to distinguish between the resistive, capacitive, and inductive contributions to the impedance across the metal-insulator transition (MIT). We developed a single, universal, equivalent circuit model to describe the dielectric behavior above and below the MIT. Our model takes account of phase-coexistence of metallic and insulating regions. We find evidence for the existence at low temperature of ultra-thin threads as described by a resistor-inductor element. A conventional resistor-capacitor element connected in parallel accounts for the insulating phase and the dielectric relaxation.",

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note = "Funding Information: This work was supported by AFOSR Grant No. FA9550-12-1-0381, COLCIENCIAS, CENM and “El Patrimonio Aut{\'o}nomo Fondo Nacional de Financiamiento para la Ciencia, la Tecnolog{\'i}a y la Innovaci{\'o}n Francisco Jos{\'e} de Caldas” Contract RC—No. 275-2011, and ISF Grant No. 727/11. R.S. wishes to acknowledge a Ram{\'o}n y Cajal Fellowship from the Ministerio de Ciencia e Innovaci{\'o}n (MICINN) in Spain. E.J.P. wishes to acknowledge “Programa Nacional de Ciencias B{\'a}sicas” COLCIENCIAS (No. 120452128168). During the publication process of this manuscript, out-of-plane impedance measurements were published on VO films grown on TiO substrates. These results also imply the coexistence of metallic and insulating phases. 2 2",

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