Ultra high temperature rapid thermal annealing of GaN

X. A. Cao; R. K. Singh; S. J. Pearton; M. Fu; J. A. Sekhar; R. G. Wilson; J. C. Zolper; J. Han; D. J. Rieger; R. J. Shul

doi:10.1016/S1369-8001(98)00037-7

Ultra high temperature rapid thermal annealing of GaN

X. A. Cao, R. K. Singh, S. J. Pearton, M. Fu, J. A. Sekhar, R. G. Wilson, J. C. Zolper, J. Han, D. J. Rieger, R. J. Shul

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

All of the major acceptor (Mg, C, Be) and donor (Si, S, Se and Te) dopants have been implanted into GaN films grown on Al₂O₃ substrates. Annealing was performed at 1100-1500°C, using AlN encapsulation. Activation percentages of ≥90% were obtained for Si⁺ implantation annealed at 1400°C, while higher temperatures led to a decrease in both carrier concentration and electron mobility. No measurable redistribution of any of the implanted dopants was observed at 1450°C.

Original language	English
Pages (from-to)	267-270
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	1
Issue number	3-4
DOIs	https://doi.org/10.1016/S1369-8001(98)00037-7
State	Published - Dec 1998
Externally published	Yes

Funding

The work of UF is partially supported by grants from NSF-DMR (L. Hess), DARPA/EPRI (E.R. Brown/J. Melcher) and a subcontract from MHI, who are supported by a BMDO SBIR grant (F19628-97-C-0092) monitored by Dr. Joe Lorenzo. RGW is partially supported by a grant from ARO (Dr. J.M. Zavada). Sandia is a multiprogram laboratory, operated by Sandia Corporation, a Lockheed–Martin company, for the US Department of Energy under contract No. DE-AC04-94 AL 85000.

Funders	Funder number
BMDO SBIR	F19628-97-C-0092
DARPA/EPRI
NSF-DMR
Sandia Corporation
US Department of Energy
Army Research Office
University of Florida
Minneapolis Heart Institute

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title = "Ultra high temperature rapid thermal annealing of GaN",

abstract = "All of the major acceptor (Mg, C, Be) and donor (Si, S, Se and Te) dopants have been implanted into GaN films grown on Al2O3 substrates. Annealing was performed at 1100-1500°C, using AlN encapsulation. Activation percentages of ≥90% were obtained for Si+ implantation annealed at 1400°C, while higher temperatures led to a decrease in both carrier concentration and electron mobility. No measurable redistribution of any of the implanted dopants was observed at 1450°C.",

author = "Cao, {X. A.} and Singh, {R. K.} and Pearton, {S. J.} and M. Fu and Sekhar, {J. A.} and Wilson, {R. G.} and Zolper, {J. C.} and J. Han and Rieger, {D. J.} and Shul, {R. J.}",

year = "1998",

month = dec,

doi = "10.1016/S1369-8001(98)00037-7",

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AU - Cao, X. A.

AU - Singh, R. K.

AU - Pearton, S. J.

AU - Fu, M.

AU - Sekhar, J. A.

AU - Wilson, R. G.

AU - Zolper, J. C.

AU - Han, J.

AU - Rieger, D. J.

AU - Shul, R. J.

PY - 1998/12

Y1 - 1998/12

N2 - All of the major acceptor (Mg, C, Be) and donor (Si, S, Se and Te) dopants have been implanted into GaN films grown on Al2O3 substrates. Annealing was performed at 1100-1500°C, using AlN encapsulation. Activation percentages of ≥90% were obtained for Si+ implantation annealed at 1400°C, while higher temperatures led to a decrease in both carrier concentration and electron mobility. No measurable redistribution of any of the implanted dopants was observed at 1450°C.

AB - All of the major acceptor (Mg, C, Be) and donor (Si, S, Se and Te) dopants have been implanted into GaN films grown on Al2O3 substrates. Annealing was performed at 1100-1500°C, using AlN encapsulation. Activation percentages of ≥90% were obtained for Si+ implantation annealed at 1400°C, while higher temperatures led to a decrease in both carrier concentration and electron mobility. No measurable redistribution of any of the implanted dopants was observed at 1450°C.

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Ultra high temperature rapid thermal annealing of GaN

Abstract

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