Type II Superlattice Infrared Detector Technology at SCD

P. C. Klipstein; E. Avnon; Y. Benny; Y. Cohen; R. Fraenkel; S. Gliksman; A. Glozman; E. Hojman; O. Klin; L. Krasovitsky; L. Langof; I. Lukomsky; I. Marderfeld; N. Yaron; M. Nitzani; N. Rappaport; I. Shtrichman; N. Snapi; E. Weiss

doi:10.1007/s11664-018-6527-8

Type II Superlattice Infrared Detector Technology at SCD

P. C. Klipstein, E. Avnon, Y. Benny, Y. Cohen, R. Fraenkel, S. Gliksman, A. Glozman, E. Hojman, O. Klin, L. Krasovitsky, L. Langof, I. Lukomsky, I. Marderfeld, N. Yaron, M. Nitzani, N. Rappaport, I. Shtrichman, N. Snapi, E. Weiss

SemiConductor Devices

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Semi-Conductor Devices’ long-wave infrared 640 × 512/15-μm pitch type II superlattice detector is based on an XBp design with an InAs/GaSb absorbing layer and an InAs/AlSb barrier layer. The barrier architecture ensures a low, diffusion-limited, dark current and allows stable passivation to all fabrication steps. It is shown that the dark current is about 10 times the Rule 07 value and corresponds to a minority carrier lifetime of about 10 ns, while the quantum efficiency can approach within 10% of the HgCdTe value for realistic detector parameters. Detectors are now being manufactured with a reasonable yield for an operability above 99.5%, and a stable and reproducible noise equivalent temperature difference of < 15 mK when operated at 30 Hz, F/2.7 and 77 K.

Original language	English
Pages (from-to)	5725-5729
Number of pages	5
Journal	Journal of Electronic Materials
Volume	47
Issue number	10
DOIs	https://doi.org/10.1007/s11664-018-6527-8
State	Published - 1 Oct 2018
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2018, The Minerals, Metals & Materials Society.

Keywords

Infrared detector
LWIR
MWIR
XBp
barrier detector
pBp
type II superlattice

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10.1007/s11664-018-6527-8

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Klipstein, P. C., Avnon, E., Benny, Y., Cohen, Y., Fraenkel, R., Gliksman, S., Glozman, A., Hojman, E., Klin, O., Krasovitsky, L., Langof, L., Lukomsky, I., Marderfeld, I., Yaron, N., Nitzani, M., Rappaport, N., Shtrichman, I., Snapi, N., & Weiss, E. (2018). Type II Superlattice Infrared Detector Technology at SCD. Journal of Electronic Materials, 47(10), 5725-5729. https://doi.org/10.1007/s11664-018-6527-8

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abstract = "Semi-Conductor Devices{\textquoteright} long-wave infrared 640 × 512/15-μm pitch type II superlattice detector is based on an XBp design with an InAs/GaSb absorbing layer and an InAs/AlSb barrier layer. The barrier architecture ensures a low, diffusion-limited, dark current and allows stable passivation to all fabrication steps. It is shown that the dark current is about 10 times the Rule 07 value and corresponds to a minority carrier lifetime of about 10 ns, while the quantum efficiency can approach within 10% of the HgCdTe value for realistic detector parameters. Detectors are now being manufactured with a reasonable yield for an operability above 99.5%, and a stable and reproducible noise equivalent temperature difference of < 15 mK when operated at 30 Hz, F/2.7 and 77 K.",

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author = "Klipstein, {P. C.} and E. Avnon and Y. Benny and Y. Cohen and R. Fraenkel and S. Gliksman and A. Glozman and E. Hojman and O. Klin and L. Krasovitsky and L. Langof and I. Lukomsky and I. Marderfeld and N. Yaron and M. Nitzani and N. Rappaport and I. Shtrichman and N. Snapi and E. Weiss",

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Klipstein, PC, Avnon, E, Benny, Y, Cohen, Y, Fraenkel, R, Gliksman, S, Glozman, A, Hojman, E, Klin, O, Krasovitsky, L, Langof, L, Lukomsky, I, Marderfeld, I, Yaron, N, Nitzani, M, Rappaport, N, Shtrichman, I, Snapi, N & Weiss, E 2018, 'Type II Superlattice Infrared Detector Technology at SCD', Journal of Electronic Materials, vol. 47, no. 10, pp. 5725-5729. https://doi.org/10.1007/s11664-018-6527-8

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T1 - Type II Superlattice Infrared Detector Technology at SCD

AU - Klipstein, P. C.

AU - Avnon, E.

AU - Benny, Y.

AU - Cohen, Y.

AU - Fraenkel, R.

AU - Gliksman, S.

AU - Glozman, A.

AU - Hojman, E.

AU - Klin, O.

AU - Krasovitsky, L.

AU - Langof, L.

AU - Lukomsky, I.

AU - Marderfeld, I.

AU - Yaron, N.

AU - Nitzani, M.

AU - Rappaport, N.

AU - Shtrichman, I.

AU - Snapi, N.

AU - Weiss, E.

PY - 2018/10/1

Y1 - 2018/10/1

N2 - Semi-Conductor Devices’ long-wave infrared 640 × 512/15-μm pitch type II superlattice detector is based on an XBp design with an InAs/GaSb absorbing layer and an InAs/AlSb barrier layer. The barrier architecture ensures a low, diffusion-limited, dark current and allows stable passivation to all fabrication steps. It is shown that the dark current is about 10 times the Rule 07 value and corresponds to a minority carrier lifetime of about 10 ns, while the quantum efficiency can approach within 10% of the HgCdTe value for realistic detector parameters. Detectors are now being manufactured with a reasonable yield for an operability above 99.5%, and a stable and reproducible noise equivalent temperature difference of < 15 mK when operated at 30 Hz, F/2.7 and 77 K.

AB - Semi-Conductor Devices’ long-wave infrared 640 × 512/15-μm pitch type II superlattice detector is based on an XBp design with an InAs/GaSb absorbing layer and an InAs/AlSb barrier layer. The barrier architecture ensures a low, diffusion-limited, dark current and allows stable passivation to all fabrication steps. It is shown that the dark current is about 10 times the Rule 07 value and corresponds to a minority carrier lifetime of about 10 ns, while the quantum efficiency can approach within 10% of the HgCdTe value for realistic detector parameters. Detectors are now being manufactured with a reasonable yield for an operability above 99.5%, and a stable and reproducible noise equivalent temperature difference of < 15 mK when operated at 30 Hz, F/2.7 and 77 K.

KW - Infrared detector

KW - LWIR

KW - MWIR

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JF - Journal of Electronic Materials

IS - 10

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Type II Superlattice Infrared Detector Technology at SCD

Abstract

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Keywords

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