Type II Superlattice Infrared Detector Technology at SCD

P. C. Klipstein, E. Avnon, Y. Benny, Y. Cohen, R. Fraenkel, S. Gliksman, A. Glozman, E. Hojman, O. Klin, L. Krasovitsky, L. Langof, I. Lukomsky, I. Marderfeld, N. Yaron, M. Nitzani, N. Rappaport, I. Shtrichman, N. Snapi, E. Weiss

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Semi-Conductor Devices’ long-wave infrared 640 × 512/15-μm pitch type II superlattice detector is based on an XBp design with an InAs/GaSb absorbing layer and an InAs/AlSb barrier layer. The barrier architecture ensures a low, diffusion-limited, dark current and allows stable passivation to all fabrication steps. It is shown that the dark current is about 10 times the Rule 07 value and corresponds to a minority carrier lifetime of about 10 ns, while the quantum efficiency can approach within 10% of the HgCdTe value for realistic detector parameters. Detectors are now being manufactured with a reasonable yield for an operability above 99.5%, and a stable and reproducible noise equivalent temperature difference of < 15 mK when operated at 30 Hz, F/2.7 and 77 K.

Original languageEnglish
Pages (from-to)5725-5729
Number of pages5
JournalJournal of Electronic Materials
Issue number10
StatePublished - 1 Oct 2018
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2018, The Minerals, Metals & Materials Society.


  • Infrared detector
  • LWIR
  • MWIR
  • XBp
  • barrier detector
  • pBp
  • type II superlattice


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