The impact of supply voltage scaling on the retention time of a 2-transistor (2T) gain-cell (GC) storage array is investigated, in order to enable low-power/low-voltage data storage. The retention time can be increased when scaling down the supply voltage for a given access statistics and a given write bit-line (WBL) control scheme. Moreover, for a given supply voltage, the retention time can be further increased by controlling the WBL to a voltage level between the supply rails during idle and read states. These two concepts are proved by means of Spectre simulation of a GC-storage array implemented in 180-nm CMOS technology. The proposed 2-kb storage macro is operated at only 40% of the nominal supply voltage and leverages the GCs to enable two-port operation with a negligible area-increase compared to a single-port implementation.
|Number of pages||4|
|State||Published - 2012|
|Event||2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of|
Duration: 20 May 2012 → 23 May 2012
|Conference||2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012|
|Country/Territory||Korea, Republic of|
|Period||20/05/12 → 23/05/12|