Two-dimensional hopping conductivity in a (formula presented)-doped (formula presented) heterostructure

S. I. Khondaker; I. S. Shlimak; J. T. Nicholls; M. Pepper; D. A. Ritchie

doi:10.1103/PhysRevB.59.4580

Two-dimensional hopping conductivity in a (formula presented)-doped (formula presented) heterostructure

S. I. Khondaker, I. S. Shlimak, J. T. Nicholls, M. Pepper, D. A. Ritchie

University of Cambridge

Research output: Contribution to journal › Article › peer-review

100 Scopus citations

Abstract

We present zero magnetic-field resistivity measurements of the variable-range hopping (VRH) in a two-dimensional electron gas created at a δ-doped (Formula presented) heterostructure. When either the temperature or carrier density are reduced the longitudinal resistivity shows a crossover from two-dimensional Mott VRH, (Formula presented) to Efros-Shklovskii (ES) Coulomb-gap behavior (Formula presented) In both regimes, near the crossover, the data collapse onto universal curves with a temperature independent prefactor (Formula presented) or (Formula presented) The latter result is in close agreement with measurements of Si metal-oxide-semiconductor field-effect transistors. We discuss the possible implications of our data on the theory of phonon-assisted VRH.

Original language	English
Pages (from-to)	4580-4583
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	59
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.59.4580
State	Published - 1999
Externally published	Yes

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title = "Two-dimensional hopping conductivity in a (formula presented)-doped (formula presented) heterostructure",

abstract = "We present zero magnetic-field resistivity measurements of the variable-range hopping (VRH) in a two-dimensional electron gas created at a δ-doped (Formula presented) heterostructure. When either the temperature or carrier density are reduced the longitudinal resistivity shows a crossover from two-dimensional Mott VRH, (Formula presented) to Efros-Shklovskii (ES) Coulomb-gap behavior (Formula presented) In both regimes, near the crossover, the data collapse onto universal curves with a temperature independent prefactor (Formula presented) or (Formula presented) The latter result is in close agreement with measurements of Si metal-oxide-semiconductor field-effect transistors. We discuss the possible implications of our data on the theory of phonon-assisted VRH.",

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year = "1999",

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T1 - Two-dimensional hopping conductivity in a (formula presented)-doped (formula presented) heterostructure

AU - Khondaker, S. I.

AU - Shlimak, I. S.

AU - Nicholls, J. T.

AU - Pepper, M.

AU - Ritchie, D. A.

PY - 1999

Y1 - 1999

N2 - We present zero magnetic-field resistivity measurements of the variable-range hopping (VRH) in a two-dimensional electron gas created at a δ-doped (Formula presented) heterostructure. When either the temperature or carrier density are reduced the longitudinal resistivity shows a crossover from two-dimensional Mott VRH, (Formula presented) to Efros-Shklovskii (ES) Coulomb-gap behavior (Formula presented) In both regimes, near the crossover, the data collapse onto universal curves with a temperature independent prefactor (Formula presented) or (Formula presented) The latter result is in close agreement with measurements of Si metal-oxide-semiconductor field-effect transistors. We discuss the possible implications of our data on the theory of phonon-assisted VRH.

AB - We present zero magnetic-field resistivity measurements of the variable-range hopping (VRH) in a two-dimensional electron gas created at a δ-doped (Formula presented) heterostructure. When either the temperature or carrier density are reduced the longitudinal resistivity shows a crossover from two-dimensional Mott VRH, (Formula presented) to Efros-Shklovskii (ES) Coulomb-gap behavior (Formula presented) In both regimes, near the crossover, the data collapse onto universal curves with a temperature independent prefactor (Formula presented) or (Formula presented) The latter result is in close agreement with measurements of Si metal-oxide-semiconductor field-effect transistors. We discuss the possible implications of our data on the theory of phonon-assisted VRH.

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JO - Physical Review B - Condensed Matter and Materials Physics

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Two-dimensional hopping conductivity in a (formula presented)-doped (formula presented) heterostructure

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