Chapter 2 Tunneling under Pressure: High-Pressure Studies of Vertical Transport in Semiconductor Heterostructures

P. C. Klipstein

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

9 Scopus citations
Original languageEnglish
Title of host publicationSemiconductors and Semimetals
PublisherAcademic Press Inc.
Pages45-116
Number of pages72
EditionC
DOIs
StatePublished - 1998
Externally publishedYes

Publication series

NameSemiconductors and Semimetals
NumberC
Volume55
ISSN (Print)0080-8784

Bibliographical note

Funding Information:
First and foremost, this review would not have been possible without the help and stimulation of several generations of research students at Oxford. They have contributed substantially to the development of many of the ideas and techniques presented here, in particular D. G. Austing, J. M. Smith, U. M. Khan-Cheema, H. Im, W. Chaudhry, and G. Rau. I am grateful to Dr. J. M. Smith and Dr. U. M. Khan Cheema for assistance with the preparation of many of the diagrams. I am also very much indebted to Dr. M. I. Eremets, whose ingenuity, technical knowledge, and willing assistance have advanced the application of high-pressure methodology at Oxford, and to Prof. R. H. Friend, who first introduced me to the excitement of high-pressure research and, with J. Simmons, also provided technical assistance in the early stages. The author acknowledges financial support from the Engineering and Physical Sciences Research Council and the Royal Society of the UK, and the Human Capital and Mobility Network program of the EU, without which this chapter could not have been written.

Funding

First and foremost, this review would not have been possible without the help and stimulation of several generations of research students at Oxford. They have contributed substantially to the development of many of the ideas and techniques presented here, in particular D. G. Austing, J. M. Smith, U. M. Khan-Cheema, H. Im, W. Chaudhry, and G. Rau. I am grateful to Dr. J. M. Smith and Dr. U. M. Khan Cheema for assistance with the preparation of many of the diagrams. I am also very much indebted to Dr. M. I. Eremets, whose ingenuity, technical knowledge, and willing assistance have advanced the application of high-pressure methodology at Oxford, and to Prof. R. H. Friend, who first introduced me to the excitement of high-pressure research and, with J. Simmons, also provided technical assistance in the early stages. The author acknowledges financial support from the Engineering and Physical Sciences Research Council and the Royal Society of the UK, and the Human Capital and Mobility Network program of the EU, without which this chapter could not have been written.

FundersFunder number
Engineering and Physical Sciences Research Council
Royal Society
European Commission

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