TUNNEL RECOMBINATION IN a-Si:H AT 'HIGH' TEMPERATURES 300-500 K.

A. A. Andreev; A. I. Kosarev; K. V. Kovgiya; I. S. Shlimak

TUNNEL RECOMBINATION IN a-Si:H AT 'HIGH' TEMPERATURES 300-500 K.

A. A. Andreev, A. I. Kosarev, K. V. Kovgiya, I. S. Shlimak

RAS - Ioffe Physico Technical Institute

Research output: Contribution to journal › Article › peer-review

Abstract

An experimental investigation was made of the photoconductivity of a-Si:H and of its kinetics at temperatures 300-500 K. Some of the features of the kinetics were explained on the basis of a model of tunnel recombination of localized carriers and the rate of recombination was governed by the predominant equilibrium densities of electrons and holes.

Original language	English
Pages (from-to)	1030-1032
Number of pages	3
Journal	Soviet physics. Semiconductors
Volume	18
Issue number	9
State	Published - Sep 1984
Externally published	Yes

Cite this

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title = "TUNNEL RECOMBINATION IN a-Si:H AT 'HIGH' TEMPERATURES 300-500 K.",

abstract = "An experimental investigation was made of the photoconductivity of a-Si:H and of its kinetics at temperatures 300-500 K. Some of the features of the kinetics were explained on the basis of a model of tunnel recombination of localized carriers and the rate of recombination was governed by the predominant equilibrium densities of electrons and holes.",

author = "Andreev, {A. A.} and Kosarev, {A. I.} and Kovgiya, {K. V.} and Shlimak, {I. S.}",

year = "1984",

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AU - Andreev, A. A.

AU - Kosarev, A. I.

AU - Kovgiya, K. V.

AU - Shlimak, I. S.

PY - 1984/9

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AB - An experimental investigation was made of the photoconductivity of a-Si:H and of its kinetics at temperatures 300-500 K. Some of the features of the kinetics were explained on the basis of a model of tunnel recombination of localized carriers and the rate of recombination was governed by the predominant equilibrium densities of electrons and holes.

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JO - Soviet physics. Semiconductors

JF - Soviet physics. Semiconductors

IS - 9

ER -

TUNNEL RECOMBINATION IN a-Si:H AT 'HIGH' TEMPERATURES 300-500 K.

Abstract

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