Tuning electronic properties of semiconductors by adsorption of [60]fullerene carboxylic acid derivatives

D. Bonifazi; A. Salomon; O. Enger; F. Diederich; D. Cahen

doi:10.1002/1521-4095(20020605)14:11<802::aid-adma802>3.0.co;2-%23

Tuning electronic properties of semiconductors by adsorption of [60]fullerene carboxylic acid derivatives

D. Bonifazi, A. Salomon, O. Enger, F. Diederich, D. Cahen

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27 Scopus citations

Abstract

Changing the electronic surface properties of GaAs and ZnO can be achieved by chemisorption of partial monolayers of C60 derivatives. This effect appears to depend on the way the C60 moiety is coupled to the semiconductor surface (see Figure), as shown by preliminary I–V investigations of (n-GaAs C60 derivative)/Au solid-state diodes.

Original language	English
Pages (from-to)	802-805
Number of pages	4
Journal	Advanced Materials
Volume	14
Issue number	11
DOIs	https://doi.org/10.1002/1521-4095(20020605)14:11<802::aid-adma802>3.0.co;2-%23
State	Published - 5 Jun 2002
Externally published	Yes

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AU - Salomon, A.

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AU - Diederich, F.

AU - Cahen, D.

PY - 2002/6/5

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AB - Changing the electronic surface properties of GaAs and ZnO can be achieved by chemisorption of partial monolayers of C60 derivatives. This effect appears to depend on the way the C60 moiety is coupled to the semiconductor surface (see Figure), as shown by preliminary I–V investigations of (n-GaAs C60 derivative)/Au solid-state diodes.

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Tuning electronic properties of semiconductors by adsorption of [60]fullerene carboxylic acid derivatives

Abstract

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