Tunable band gaps in bilayer graphene-BN heterostructures

Ashwin Ramasubramaniam, Doron Naveh, Elias Towe

Research output: Contribution to journalArticlepeer-review

221 Scopus citations

Abstract

We investigate band gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that graphene-boron nitride heterostructures could provide a viable route to graphene-based electronic devices.

Original languageEnglish
Pages (from-to)1070-1075
Number of pages6
JournalNano Letters
Volume11
Issue number3
DOIs
StatePublished - 9 Mar 2011
Externally publishedYes

Keywords

  • Graphene
  • band-gap engineering
  • electronic structure
  • hexagonal boron nitride

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