Transient recrystallization of amorphous silicon films

Keyphrases

• Microstructure 100%
• Amorphous Silicon Thin Film 100%
• Recrystallization 100%
• Silica 66%
• Grain Size 66%
• Transmission Electron Microscopy 66%
• Capping Layer 66%
• Energy Density 33%
• X Ray Diffraction 33%
• Si Substrate 33%
• Electrical Properties 33%
• Annealing Process 33%
• Laser Wavelength 33%
• Incoherent Light 33%
• SiO2 Layer 33%
• Rapid Thermal Annealing 33%
• Multilayered Structure 33%
• Conventional Furnace Annealing 33%
• Condition Equation 33%
• Laser Interaction 33%
• Pulsed Excimer Laser 33%
• Final Microstructure 33%
• Laser Annealing 33%
• Amorphous Crystallization 33%
• Heat Conditions 33%

Engineering

• Microstructure 100%
• Transients 100%
• Film Silicon 100%
• Transmissions 66%
• Capping Layer 66%
• Ray Diffraction 33%
• Si Substrate 33%
• Laser Wavelength 33%
• Layered Structure 33%
• Rapid Thermal Annealing 33%
• Excimer Laser 33%
• Sio2 Layer 33%
• Energy Density 33%
• Boundary Condition 33%
• Laser Interaction 33%
• Final Microstructure 33%
• Annealing Furnace 33%

Material Science

• Film 100%
• Annealing 100%
• Amorphous Silicon 100%
• Grain Size 66%
• Transmission Electron Microscopy 66%
• Energy Density 33%
• X-Ray Diffraction 33%