Transient photoconductivity and demarcation energies in amorphous semiconductors

V. Halpern

Research output: Contribution to journalLetterpeer-review

5 Scopus citations

Abstract

In the theoretical analysis of transient photoconductivity data on amorphous semiconductors in terms of multiple trapping, a number of recent publications use the concept of a time-dependent demarcation energy Ed(t) such that, at time t, the excess charge carriers occupying localized states between the mobility edge and this energy are in quasi-thermal equilibrium with the free carriers in extended states, while those occupying states with energies beyond Ed(t) have had no time to leave such states. Results are reported of calculations of the occupancy of the localized states for a current transient of the form Ct(1-α) that is often observed. The results show that such a simplistic interpretation of Ed(t) involves appreciable numerical errors, so that the concept of a demarcation energy is only useful for the qualitative, rather than the quantitative, analysis of experimental results.

Original languageEnglish
Pages (from-to)49-52
Number of pages4
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume51
Issue number5
DOIs
StatePublished - May 1985

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