TY - JOUR
T1 - Transient Electrochemical Measurements During Copper Chemical Mechanical Polishing
AU - Lee, Seung Mahn
AU - Choi, Wonseop
AU - Craciun, Valentin
AU - Singh, Rajiv K.
PY - 2003
Y1 - 2003
N2 - Chronoamperometry was used to investigate the reaction/passivation kinetics and thickness of the chemically modified surface layer on the copper during chemical mechanical polishing (CMP). The result showed that the reaction/passivation kinetics and the thickness of the chemically modified surface layer are strongly dependent on the chemistry of CMP slurry in the chemical aspect of CMP and play critical keys in the selection of the chemistry and its concentration. BTA and H2O2 enhanced the passivation kinetics, resulting in thinner layer on the copper surface. In addition, the reaction kinetics increased as pH decreased.
AB - Chronoamperometry was used to investigate the reaction/passivation kinetics and thickness of the chemically modified surface layer on the copper during chemical mechanical polishing (CMP). The result showed that the reaction/passivation kinetics and the thickness of the chemically modified surface layer are strongly dependent on the chemistry of CMP slurry in the chemical aspect of CMP and play critical keys in the selection of the chemistry and its concentration. BTA and H2O2 enhanced the passivation kinetics, resulting in thinner layer on the copper surface. In addition, the reaction kinetics increased as pH decreased.
UR - http://www.scopus.com/inward/record.url?scp=0242385501&partnerID=8YFLogxK
U2 - 10.1557/proc-767-f2.9
DO - 10.1557/proc-767-f2.9
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AN - SCOPUS:0242385501
SN - 0272-9172
VL - 767
SP - 127
EP - 132
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Chemical-Mechanical Planarization
Y2 - 22 April 2003 through 24 April 2003
ER -