Towards a six-state magnetic memory element

Yevgeniy Telepinsky, Vladislav Mor, Moty Schultz, Yu Ming Hung, Andrew D. Kent, Lior Klein

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Abstract

We pattern permalloy films into three crossing elongated ellipses with an angle of 60°between the major axes of any pair of ellipses. Planar Hall effect measurements show that the magnetization in the area of overlap of the ellipses has six stable magnetic orientations parallel to the major axes of the three ellipses. We determine the effective anisotropy field for small magnetic deviations from the easy axis and the switching field between the easy axes as a function of magnetic field orientation. We compare our results with micromagnetic simulations and present an effective Hamiltonian that captures the magnetic response. We show how such magnetic structures in a magnetic tunnel junction would result in a magnetic memory element with six distinct resistance states that could be written using spin-orbit torques.

Original languageEnglish
Article number182401
JournalApplied Physics Letters
Volume108
Issue number18
DOIs
StatePublished - 2 May 2016

Bibliographical note

Funding Information:
L.K. acknowledges support by the Israel Science Foundation founded by the Israel Academy of Science and Humanities. L.K. and A.D.K. acknowledge support by the U.S.-Israel Binational Science Foundation (2012169). Y.H. and A.D.K. acknowledge support by Nanoelectronics Research Initiative (NRI) through the Institute for Nanoelectronics Discovery and Exploration (INDEX) and support of the NSF Division of Materials Research (1309202).

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