Towards a black-box methodology for SRAM stability analysis

Robert Giterman, A. Fish

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


SRAM stability analysis has become a primary issue in the design of memories. While the classic definition of static noise margin based on butterfly curves was once enough to determine SRAM stability and properly size the transistors of a 6T bitcell, the recent trends of technology and supply voltage scaling have caused SRAM yield to decrease significantly. As a result, more complex methodologies for stability analysis have been suggested in the form of dynamic noise margins. In this paper, a brief review of static and dynamic analysis methods is given, along with the advantages and disadvantages of each approach. Ultimately, a combination of these approaches should lead to the development of a complete toolkit for stability analysis in the deep-nanoscale era.
Original languageAmerican English
Title of host publicationElectrical & Electronics Engineers in Israel (IEEEI), 2014 IEEE 28th Convention of
StatePublished - 2014

Bibliographical note

Place of conference:Israel


Dive into the research topics of 'Towards a black-box methodology for SRAM stability analysis'. Together they form a unique fingerprint.

Cite this