TY - GEN
T1 - Towards a black-box methodology for SRAM stability analysis
AU - Giterman, Robert
AU - Fish, A.
N1 - Place of conference:Israel
PY - 2014
Y1 - 2014
N2 - SRAM stability analysis has become a primary issue in the design of memories. While the classic definition of static noise margin based on butterfly curves was once enough to determine SRAM stability and properly size the transistors of a 6T bitcell, the recent trends of technology and supply voltage scaling have caused SRAM yield to decrease significantly. As a result, more complex methodologies for stability analysis have been suggested in the form of dynamic noise margins. In this paper, a brief review of static and dynamic analysis methods is given, along with the advantages and disadvantages of each approach. Ultimately, a combination of these approaches should lead to the development of a complete toolkit for stability analysis in the deep-nanoscale era.
AB - SRAM stability analysis has become a primary issue in the design of memories. While the classic definition of static noise margin based on butterfly curves was once enough to determine SRAM stability and properly size the transistors of a 6T bitcell, the recent trends of technology and supply voltage scaling have caused SRAM yield to decrease significantly. As a result, more complex methodologies for stability analysis have been suggested in the form of dynamic noise margins. In this paper, a brief review of static and dynamic analysis methods is given, along with the advantages and disadvantages of each approach. Ultimately, a combination of these approaches should lead to the development of a complete toolkit for stability analysis in the deep-nanoscale era.
UR - https://scholar.google.co.il/scholar?q=Towards+a+Black-Box+Methodology+for+SRAM+Stability+Analysis&btnG=&hl=en&as_sdt=0%2C5
M3 - Conference contribution
BT - Electrical & Electronics Engineers in Israel (IEEEI), 2014 IEEE 28th Convention of
PB - IEEE
ER -