Towards a black-box methodology for SRAM stability analysis

Robert Giterman; Alexander Fish

doi:10.1109/eeei.2014.7005777

Towards a black-box methodology for SRAM stability analysis

Robert Giterman, Alexander Fish

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

SRAM stability analysis has become a primary issue in the design of memories. While the classic definition of static noise margin based on butterfly curves was once enough to determine SRAM stability and properly size the transistors of a 6T bitcell, the recent trends of technology and supply voltage scaling have caused SRAM yield to decrease significantly. As a result, more complex methodologies for stability analysis have been suggested in the form of dynamic noise margins. In this paper, a brief review of static and dynamic analysis methods is given, along with the advantages and disadvantages of each approach. Ultimately, a combination of these approaches should lead to the development of a complete toolkit for stability analysis in the deep-nanoscale era.

Original language	English
Title of host publication	2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479959877
DOIs	https://doi.org/10.1109/eeei.2014.7005777
State	Published - 2014
Event	2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 - Eilat, Israel Duration: 3 Dec 2014 → 5 Dec 2014

Publication series

Name	2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

Conference

Conference	2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014
Country/Territory	Israel
City	Eilat
Period	3/12/14 → 5/12/14

Bibliographical note

Publisher Copyright:
© Copyright 2015 IEEE All rights reserved.

Keywords

Dynamic noise margin
SRAM
Separatrix
Stability analysis
Static noise margin

Access to Document

10.1109/eeei.2014.7005777

Cite this

Giterman, R., & Fish, A. (2014). Towards a black-box methodology for SRAM stability analysis. In 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 Article 7005777 (2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/eeei.2014.7005777

@inproceedings{4227cf1b5e334c1d8e6bb2ceb48532f0,

title = "Towards a black-box methodology for SRAM stability analysis",

abstract = "SRAM stability analysis has become a primary issue in the design of memories. While the classic definition of static noise margin based on butterfly curves was once enough to determine SRAM stability and properly size the transistors of a 6T bitcell, the recent trends of technology and supply voltage scaling have caused SRAM yield to decrease significantly. As a result, more complex methodologies for stability analysis have been suggested in the form of dynamic noise margins. In this paper, a brief review of static and dynamic analysis methods is given, along with the advantages and disadvantages of each approach. Ultimately, a combination of these approaches should lead to the development of a complete toolkit for stability analysis in the deep-nanoscale era.",

keywords = "Dynamic noise margin, SRAM, Separatrix, Stability analysis, Static noise margin",

author = "Robert Giterman and Alexander Fish",

note = "Publisher Copyright: {\textcopyright} Copyright 2015 IEEE All rights reserved.; 2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014 ; Conference date: 03-12-2014 Through 05-12-2014",

year = "2014",

doi = "10.1109/eeei.2014.7005777",

language = "אנגלית",

series = "2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014",

address = "ארצות הברית",

}

Giterman, R & Fish, A 2014, Towards a black-box methodology for SRAM stability analysis. in 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014., 7005777, 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014, Institute of Electrical and Electronics Engineers Inc., 2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014, Eilat, Israel, 3/12/14. https://doi.org/10.1109/eeei.2014.7005777

Towards a black-box methodology for SRAM stability analysis. / Giterman, Robert; Fish, Alexander.
2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 7005777 (2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Towards a black-box methodology for SRAM stability analysis

AU - Giterman, Robert

AU - Fish, Alexander

PY - 2014

Y1 - 2014

N2 - SRAM stability analysis has become a primary issue in the design of memories. While the classic definition of static noise margin based on butterfly curves was once enough to determine SRAM stability and properly size the transistors of a 6T bitcell, the recent trends of technology and supply voltage scaling have caused SRAM yield to decrease significantly. As a result, more complex methodologies for stability analysis have been suggested in the form of dynamic noise margins. In this paper, a brief review of static and dynamic analysis methods is given, along with the advantages and disadvantages of each approach. Ultimately, a combination of these approaches should lead to the development of a complete toolkit for stability analysis in the deep-nanoscale era.

AB - SRAM stability analysis has become a primary issue in the design of memories. While the classic definition of static noise margin based on butterfly curves was once enough to determine SRAM stability and properly size the transistors of a 6T bitcell, the recent trends of technology and supply voltage scaling have caused SRAM yield to decrease significantly. As a result, more complex methodologies for stability analysis have been suggested in the form of dynamic noise margins. In this paper, a brief review of static and dynamic analysis methods is given, along with the advantages and disadvantages of each approach. Ultimately, a combination of these approaches should lead to the development of a complete toolkit for stability analysis in the deep-nanoscale era.

KW - Dynamic noise margin

KW - SRAM

KW - Separatrix

KW - Stability analysis

KW - Static noise margin

UR - http://www.scopus.com/inward/record.url?scp=84941253805&partnerID=8YFLogxK

U2 - 10.1109/eeei.2014.7005777

DO - 10.1109/eeei.2014.7005777

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:84941253805

T3 - 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

BT - 2014 IEEE 28th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 28th IEEE Convention of Electrical and Electronics Engineers in Israel, IEEEI 2014

Y2 - 3 December 2014 through 5 December 2014

ER -

Towards a black-box methodology for SRAM stability analysis

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this