TY - JOUR
T1 - Toward metal-organic insulator-semiconductor solar cells, based on molecular monolayer self-assembly on n-Si
AU - Har-Lavan, Rotem
AU - Ron, Izhar
AU - Thieblemont, Florent
AU - Cahen, David
PY - 2009
Y1 - 2009
N2 - Alkyl chain molecules on n-Si were used to test the concept of hybrid metal-organic insulator-semiconductor (MOIS) solar cells. Test structures were made by binding alkyl chain molecules via Si-O-C bonds to oxide-free n-Si surfaces, using self-assembly. With thiol groups at the terminals away from the Si, binding of Au nanoparticles, followed by electroless Au plating yields semitransparent top contacts. First cells give, under 25 mW/ cm2 white light illumination, open-circuit voltage Voc =0.48 V and fill factor FF=0.58. Because with sulfur termination the molecules have a dipole that limits inversion of the Si, we also used methyl-terminated monolayers. Even though then we can work, at this point, only with a Hg top contact, without chemical bond to the molecules, we get, using only radiation (∼AM 1.5) collected around the contact, the expected higher Voc =0.54 V, and respectable 0.8 FF, justifying further MOIS cell development.
AB - Alkyl chain molecules on n-Si were used to test the concept of hybrid metal-organic insulator-semiconductor (MOIS) solar cells. Test structures were made by binding alkyl chain molecules via Si-O-C bonds to oxide-free n-Si surfaces, using self-assembly. With thiol groups at the terminals away from the Si, binding of Au nanoparticles, followed by electroless Au plating yields semitransparent top contacts. First cells give, under 25 mW/ cm2 white light illumination, open-circuit voltage Voc =0.48 V and fill factor FF=0.58. Because with sulfur termination the molecules have a dipole that limits inversion of the Si, we also used methyl-terminated monolayers. Even though then we can work, at this point, only with a Hg top contact, without chemical bond to the molecules, we get, using only radiation (∼AM 1.5) collected around the contact, the expected higher Voc =0.54 V, and respectable 0.8 FF, justifying further MOIS cell development.
UR - http://www.scopus.com/inward/record.url?scp=59349092385&partnerID=8YFLogxK
U2 - 10.1063/1.3076115
DO - 10.1063/1.3076115
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AN - SCOPUS:59349092385
SN - 0003-6951
VL - 94
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
M1 - 043308
ER -