Total Ionization Dose (TID) Effects on 2D MOS Devices

Shashi Bala; Raj Kumar; Arvind Kumar

doi:10.1007/s42341-020-00255-3

Total Ionization Dose (TID) Effects on 2D MOS Devices

Shashi Bala
, Raj Kumar
, Arvind Kumar

Research output: Contribution to journal › Review article › peer-review

16 Scopus citations

Abstract

Electronics and Electricals devices are used in radiations environments for space applications. Radiation has immense potential to disturb the basic properties of electronics devices by interfere with the devices. Radiations affect most MOSFET among the various electronics devices, by creating radiation induced total ionizing dose (TID) effects, single event effects and heavy ion displacement damages, will be discussed. TID effects are persuaded due to ionization energy established in oxides and insulators existing in the devices, by electrons, charged hadrons, neutrons and gammas, prominent to device degradation and letdown. This paper reviews, the basic mechanism of TID in SiO₂ and other alternate oxides in device and how, this affects threshold voltage, Sub threshold swing and leakage current in MOSFETs. Radiations response to the silicon-on-insulator technology will also be discussed.

Original language	English
Journal	Transactions on Electrical and Electronic Materials
Volume	22
Issue number	1
DOIs	https://doi.org/10.1007/s42341-020-00255-3
State	Published - Feb 2021
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2020, The Korean Institute of Electrical and Electronic Material Engineers.

Keywords

FinFETs
Mosfets
Oxide thickness
Radiation induced charge
Silicon on insulator (SOI)
Total dose effects (TID)

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10.1007/s42341-020-00255-3

Cite this

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abstract = "Electronics and Electricals devices are used in radiations environments for space applications. Radiation has immense potential to disturb the basic properties of electronics devices by interfere with the devices. Radiations affect most MOSFET among the various electronics devices, by creating radiation induced total ionizing dose (TID) effects, single event effects and heavy ion displacement damages, will be discussed. TID effects are persuaded due to ionization energy established in oxides and insulators existing in the devices, by electrons, charged hadrons, neutrons and gammas, prominent to device degradation and letdown. This paper reviews, the basic mechanism of TID in SiO2 and other alternate oxides in device and how, this affects threshold voltage, Sub threshold swing and leakage current in MOSFETs. Radiations response to the silicon-on-insulator technology will also be discussed.",

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doi = "10.1007/s42341-020-00255-3",

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AU - Bala, Shashi

AU - Kumar, Raj

AU - Kumar, Arvind

PY - 2021/2

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N2 - Electronics and Electricals devices are used in radiations environments for space applications. Radiation has immense potential to disturb the basic properties of electronics devices by interfere with the devices. Radiations affect most MOSFET among the various electronics devices, by creating radiation induced total ionizing dose (TID) effects, single event effects and heavy ion displacement damages, will be discussed. TID effects are persuaded due to ionization energy established in oxides and insulators existing in the devices, by electrons, charged hadrons, neutrons and gammas, prominent to device degradation and letdown. This paper reviews, the basic mechanism of TID in SiO2 and other alternate oxides in device and how, this affects threshold voltage, Sub threshold swing and leakage current in MOSFETs. Radiations response to the silicon-on-insulator technology will also be discussed.

AB - Electronics and Electricals devices are used in radiations environments for space applications. Radiation has immense potential to disturb the basic properties of electronics devices by interfere with the devices. Radiations affect most MOSFET among the various electronics devices, by creating radiation induced total ionizing dose (TID) effects, single event effects and heavy ion displacement damages, will be discussed. TID effects are persuaded due to ionization energy established in oxides and insulators existing in the devices, by electrons, charged hadrons, neutrons and gammas, prominent to device degradation and letdown. This paper reviews, the basic mechanism of TID in SiO2 and other alternate oxides in device and how, this affects threshold voltage, Sub threshold swing and leakage current in MOSFETs. Radiations response to the silicon-on-insulator technology will also be discussed.

KW - FinFETs

KW - Mosfets

KW - Oxide thickness

KW - Radiation induced charge

KW - Silicon on insulator (SOI)

KW - Total dose effects (TID)

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Total Ionization Dose (TID) Effects on 2D MOS Devices

Abstract

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Keywords

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