Topological Insulator TlBiSe₂/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector

Keyphrases

• Heterojunction 100%
• Topological Insulator 100%
• Heterojunction Diode 100%
• Near-infrared Photodetector 100%
• Vertical Heterojunction 100%
• Charge Carriers 50%
• Vibrational Modes 50%
• Energy Band 50%
• Photodetector 50%
• Near-infrared 50%
• Optical Power 50%
• Excited States 50%
• Quasi-2D 50%
• Diode 50%
• Reverse Bias 50%
• 2D Thin Films 50%
• Photoresponse 50%
• Raman Peak 50%
• Photodetection 50%
• Exciton Dynamics 50%
• Electrical Characterization 50%
• Ultrafast Kinetics 50%
• Charge Transient 50%
• Spectrum Characteristics 50%
• Transient Absorption Spectroscopy 50%
• Thermal Evaporation Method 50%
• Rectification Ratio 50%
• Topological Insulator Material 50%
• Surface Phonons 50%
• Heterojunction Device 50%
• Current Conduction Mechanism 50%
• Light Impact 50%
• Carrier Absorption 50%
• Succeeding 50%
• Induced Signal 50%
• Forward Bias 50%
• Substrate-induced 50%

Engineering

• Photodetector 100%
• Heterojunctions 100%
• Transients 25%
• Reverse Bias 25%
• Infrared Region 25%
• Excited State 25%
• Photodetection 25%
• Raman Peak 25%
• Thin Films 25%
• Charge Carrier 25%
• Energy Band 25%
• Forward Bias 25%
• Rectification Ratio 25%
• Optical Power 25%

Material Science

• Heterojunction 100%
• Charge Carrier 25%
• Absorption Spectroscopy 25%
• Optical Power 25%
• Surface Phonon 25%
• Thin Films 25%