Topological Insulator TlBiSe2/GaN Vertical Heterojunction Diode for High Responsive Broadband UV to Near-Infrared Photodetector

Gyanendra Kumar Maurya, Vidushi Gautam, Faizan Ahmad, Roshani Singh, Sandeep Verma, Kavindra Kandpal, Rachana Kumar, Mahesh Kumar, Akhilesh Tiwari, Pramod Kumar

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1 Scopus citations

Abstract

Quasi-2D thin film of TI material TlBiSe2, as well as TlBiSe2/GaN configuration, have been fabricated employing the thermal evaporation technique. Raman peaks of vibrational modes were analyzed in a TlBiSe2/GaN heterojunction showing a substrate-induced signal for the surface phonon mode (SPM). The study of ultrafast kinetics of charge carriers and transient absorption spectroscopy (TAS) gave excited-state spectrum characteristics and exciton dynamics in TlBiSe2/GaN heterojunction. The electrical characterization showed that the heterojunction device exhibited a good diode nature with an excellent rectification ratio of 160. The photodetection capabilities were examined by optical power varying from 2.37 µW to 3.78 µW in the ultraviolet to near-infrared region (300–900 nm). It demonstrated maximum photoresponse at 500 nm in forward and reverse bias. The current conduction mechanism and enhancement in current under light impact were explained using energy band modeling. The present work is important in regarding the development of photodetectors of succeeding generations with a topological insulator material.

Original languageEnglish
Pages (from-to)1561-1576
Number of pages16
JournalJournal of Electronic Materials
Volume53
Issue number3
DOIs
StatePublished - Mar 2024
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2024, The Minerals, Metals & Materials Society.

Funding

The Dr. Pramod Kumar would like to thank Science and Engineering Research Board, Govt. of India (CRG/2022/000070) and CSTUP (CST/D-1307) for providing the financial support to carry out this work. Chemistry & IRCB Laboratory, Department of Applied Sciences, Indian Institute of Information Technology Allahabad for synthesis. VLSI Lab, Department of Electronics, and communications, IIIT Allahabad for electrical characterization. This work was also funded by Science and Engineering Research Board under Early Career Research Award Scheme (ECR/2017/001852), Department of Science and Technology. The Dr. Pramod Kumar would like to thank Science and Engineering Research Board, Govt. of India (CRG/2022/000070) and CSTUP (CST/D-1307) for providing the financial support to carry out this work. Chemistry & IRCB Laboratory, Department of Applied Sciences, Indian Institute of Information Technology Allahabad for synthesis. VLSI Lab, Department of Electronics, and communications, IIIT Allahabad for electrical characterization. This work was also funded by Science and Engineering Research Board under Early Career Research Award Scheme (ECR/2017/001852), Department of Science and Technology.

FundersFunder number
CSTUPCST/D-1307
Department of Science and Technology, Ministry of Science and Technology, India
Science and Engineering Research BoardECR/2017/001852, CRG/2022/000070
Indraprastha Institute of Information Technology, Delhi

    Keywords

    • Raman spectroscopy
    • Topological insulator thin film
    • detectivity
    • heterojunction photodetector
    • photo-to-dark current ratio (PDCR)
    • responsivity
    • transient absorption spectroscopy (TAS)
    • ultrafast dynamics

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