Three-Terminal VO2 -Based Device with Internal Read-Write Switching

Keyphrases

• Three-terminal 100%
• Mott Materials 100%
• Aluminum Oxide 66%
• Non-volatile 66%
• Insulating State 66%
• Metallic State 66%
• Device-independent 66%
• Oxygen Motion 66%
• Transistor 33%
• Gate Voltage 33%
• Miniaturization 33%
• Ultrathin 33%
• Solid State 33%
• Silicon-based 33%
• Field-induced 33%
• Power Efficiency 33%
• Memristor 33%
• Memory Application 33%
• Operation Speed 33%
• Field Effect 33%
• State Change 33%
• Power Operation 33%
• Gate Dielectric 33%
• Neuromorphic Computing 33%
• Channel Resistance 33%
• Memristive Devices 33%
• Synaptic Transistor 33%
• Metal-Oxide-Semiconductor Field-Effect 33%
• Synaptic Device 33%
• Mott Metal-insulator Transition 33%
• Near-room Temperature 33%
• Correlated Oxides 33%
• High-performance Electronics 33%

Material Science

• Transistor 100%
• Al2O3 50%
• Aluminum Oxide 50%
• Metal Oxide 50%
• Dielectric Material 50%
• Silicon 50%
• Oxide Semiconductor 50%
• Oxide Compound 50%