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Three-dimensional asymmetrical modeling of rapid thermal annealing of silicon wafers
V. Nagabushnam
, R. K. Singh
University of Florida
Research output
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Contribution to journal
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Conference article
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peer-review
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Dive into the research topics of 'Three-dimensional asymmetrical modeling of rapid thermal annealing of silicon wafers'. Together they form a unique fingerprint.
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Engineering
Control Volume
50%
Convective
100%
Flow Direction
50%
Gas Flow
50%
Heat Conduction Equation
50%
Heat Losses
50%
Nonuniformity
100%
Numerical Solution
50%
Physical Model
50%
Processing Step
50%
Radiative Heat Loss
50%
Rapid Thermal Annealing
100%
Rapid Thermal Processing
50%
Silicon Wafer
100%
Thermal Cycle
100%
Transfer Process
50%
Keyphrases
Ambient Gas Flow
20%
Analytical Tools
20%
Control Volume
20%
Convective Heat Loss
20%
Cycle Basis
20%
Gas Flow Direction
20%
Heat Conduction Equation
20%
Heat Transfer Process
20%
Hybrid Control
20%
Numerical Solution
20%
Oxides
20%
Physical Model
20%
Processing Stages
20%
Radiative Heat Loss
20%
Rapid Thermal Annealing
100%
Rapid Thermal Processing
20%
Silicon Wafer
100%
Temperature Uniformity
40%
Temperature Variation
40%
Thermal Conduction
20%
Thermal Cycling
40%
Three-dimensional (3D)
100%
Wafer
100%
Material Science
Annealing
100%
Gas Flow
100%
Oxide Compound
100%
Silicon Wafer
100%
Transfer Process
100%
Chemical Engineering
Heat Conduction
100%