3rd generation infrared detector program at SCD

Philip Klipstein, Zipora Calahorra, Ami Zemel, Rafi Gatt, Eli Harush, Eli Jacobsohn, Olga Klin, Michael Yassen, Joelle Oiknine-Schlesinger, Eliezer Weiss, Salomon Risemberg

Research output: Contribution to journalConference articlepeer-review

19 Scopus citations


Antimonide Based Compound Semiconductors (ABCS) and a new family of advanced analogue and digital silicon read-out integrated circuits form the basis of the SCD 3rd generation detector program, which builds on the firm platform of SCDs existing InSb-FPA technology. In order to cover the MWIR atmospheric window, we recently proposed the epitaxial alloys: InAs 1-y Sby on GaSb with 0.07 < y < 0.11 and In 1-z Alz Sb on InSb with 0 < z < 0.03. In this paper we focus on the results of some of our recent work on epitaxial In 1-z Alz Sb grown on InSb by Molecular Beam Epitxay (MBE). In epitaxial InSb (z = 0), we demonstrate the performance of Focal Plane Arrays (FPAs) with a format of 320×256 pixels, at focal plane temperatures between 77K and 100K. An operability has been achieved which is in excess of 99.5%, with a Residual Non-Uniformity (RNU) at 95K of less than 0.03% (standard deviation/dynamic range). Moreover, after a two point Non-Uniformity Correction (NUC) has been applied at 95K, the RNU remains below ∼0.1% at all focal plane temperatures down to 85K and up to 100K without the need to apply any further correction. This is a major improvement in both the temperature of operation and the temperature stability compared with implanted diodes made from bulk material. We also demonstrate rapid progress in the development of low current epitaxial InAlSb photodiodes with high uniformity and low dark current that offer a range of cut-off wavelengths shorter than in InSb. Preliminary results are presented on FPAs with a cut-off wavelength in the range λC ∼5μ.

Original languageEnglish
Pages (from-to)222-229
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Issue numberPART 1
StatePublished - 2004
Externally publishedYes
EventInfrared Technology and Applications XXX - Orlando, FL, United States
Duration: 12 Apr 200416 Apr 2004


  • Antimonide Based Compound Semiconductors
  • Digital Detector Dewar Cooler
  • Digital Focal Plane Processor
  • Focal Plane Array
  • Indium Aluminum Antimonide
  • Infrared Detector
  • Molecular Beam Epitaxy


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