Thermal scanning probe and laser lithography for patterning nanowire based quantum devices

Lior Shani, Jana Chaaban, Alec Nilson, Eliott Clerc, Gavin Menning, Colin Riggert, Pim Lueb, Marco Rossi, Ghada Badawy, Erik P.A.M. Bakkers, Vlad S. Pribiag

Research output: Contribution to journalArticlepeer-review

Abstract

Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin-orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.

Original languageEnglish
Article number255302
JournalNanotechnology
Volume35
Issue number25
DOIs
StatePublished - 4 Apr 2024
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2024 The Author(s). Published by IOP Publishing Ltd.

Keywords

  • electrical charicterization
  • InSb
  • nanofabrication
  • nanowires

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