Abstract
A theoretical model is proposed which is able to describe the mechanism of photostructural changes in glassy semiconductors, involving negative-U centers as basic charge carriers, of which the electronic states are excited by gap light. This answers the old question of why such changes are only found in glassy semiconductors: negative-U centers are present only in these materials. The theory permits the calculation of the related quantum-mechanical transition probabilities.
| Original language | English |
|---|---|
| Pages (from-to) | 165-171 |
| Number of pages | 7 |
| Journal | Physics Letters, Section A: General, Atomic and Solid State Physics |
| Volume | 278 |
| Issue number | 3 |
| DOIs | |
| State | Published - 25 Dec 2000 |
Bibliographical note
Funding Information:This work was supported by Israel Science Foundation (Grant No. 526/99-11.7).
Funding
This work was supported by Israel Science Foundation (Grant No. 526/99-11.7).
| Funders | Funder number |
|---|---|
| Israel Science Foundation | 526/99-11.7 |