Theoretical model of photostructural changes in glassy semiconductors

F. Bass, V. Halpern, M. I. Klinger

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


A theoretical model is proposed which is able to describe the mechanism of photostructural changes in glassy semiconductors, involving negative-U centers as basic charge carriers, of which the electronic states are excited by gap light. This answers the old question of why such changes are only found in glassy semiconductors: negative-U centers are present only in these materials. The theory permits the calculation of the related quantum-mechanical transition probabilities.

Original languageEnglish
Pages (from-to)165-171
Number of pages7
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Issue number3
StatePublished - 25 Dec 2000

Bibliographical note

Funding Information:
This work was supported by Israel Science Foundation (Grant No. 526/99-11.7).


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