TY - JOUR
T1 - Theoretical model of photostructural changes in glassy semiconductors
AU - Bass, F.
AU - Halpern, V.
AU - Klinger, M. I.
N1 - Funding Information:
This work was supported by Israel Science Foundation (Grant No. 526/99-11.7).
PY - 2000/12/25
Y1 - 2000/12/25
N2 - A theoretical model is proposed which is able to describe the mechanism of photostructural changes in glassy semiconductors, involving negative-U centers as basic charge carriers, of which the electronic states are excited by gap light. This answers the old question of why such changes are only found in glassy semiconductors: negative-U centers are present only in these materials. The theory permits the calculation of the related quantum-mechanical transition probabilities.
AB - A theoretical model is proposed which is able to describe the mechanism of photostructural changes in glassy semiconductors, involving negative-U centers as basic charge carriers, of which the electronic states are excited by gap light. This answers the old question of why such changes are only found in glassy semiconductors: negative-U centers are present only in these materials. The theory permits the calculation of the related quantum-mechanical transition probabilities.
UR - http://www.scopus.com/inward/record.url?scp=0034716166&partnerID=8YFLogxK
U2 - 10.1016/S0375-9601(00)00760-X
DO - 10.1016/S0375-9601(00)00760-X
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AN - SCOPUS:0034716166
SN - 0375-9601
VL - 278
SP - 165
EP - 171
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
IS - 3
ER -