A theoretical model is proposed which is able to describe the mechanism of photostructural changes in glassy semiconductors, involving negative-U centers as basic charge carriers, of which the electronic states are excited by gap light. This answers the old question of why such changes are only found in glassy semiconductors: negative-U centers are present only in these materials. The theory permits the calculation of the related quantum-mechanical transition probabilities.
|Number of pages||7|
|Journal||Physics Letters, Section A: General, Atomic and Solid State Physics|
|State||Published - 25 Dec 2000|
Bibliographical noteFunding Information:
This work was supported by Israel Science Foundation (Grant No. 526/99-11.7).