The statistics of recombination via dangling bonds in amorphous silicon

V. Halpern

Research output: Contribution to journalArticlepeer-review

33 Scopus citations


Dangling bonds are an important type of recombination centre in semiconductors such as amorphous silicon, so that an accurate analysis of their properties is of considerable value. The large positive correlation energy of the electron states associated with such dangling bonds leads to rather cumbersome and complicated forms of the exact formulae for their occupation statistics and the rate of recombination through them. In this paper it is shown that, under many conditions, a dangling bond behaves in the same way as a pair of independent ordinary electron states. The use of this two-state model, especially in conjunction with Rose’s demarcation level approximation, leads to simple formulae that are very suitable for calculations and for the analysis of experimental results.

Original languageEnglish
Pages (from-to)473-482
Number of pages10
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Issue number6
StatePublished - Dec 1986


Dive into the research topics of 'The statistics of recombination via dangling bonds in amorphous silicon'. Together they form a unique fingerprint.

Cite this