Abstract
It is shown that very near the metal-insulator transition in a three-dimensional system at very low temperatures (T), the inelastic diffusion length (Li) is reduced and may become the smallest length scale. In this region the conductivity, sigma, follows the law sigma = sigma 0+mT1/2where the T1/2dependence arises primarily from a diffusion length Li approximately sigma 032//T1/2which is smaller than the interaction length LT approximately sigma 12//T1/2when sigma 0 is small. The authors present experimental evidence for these results. In particular, for InSb they find m varies as sigma 0-3/2and for compensated GaAs they find negative magnetoresistance near the transition, which yields Li approximately T-1/2.
| Original language | English |
|---|---|
| Pages (from-to) | L19-L24 |
| Journal | Journal of Physics C: Solid State Physics |
| Volume | 20 |
| Issue number | 3 |
| DOIs | |
| State | Published - 30 Jan 1987 |
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