The Scaling Behaviour of the Metal-Insulator Transition of Isotopically Engineered Neutron-Transmutation Doped Germanium

R. Rentzsch; A. N. Ionov; Ch Reich; M. Müller; B. Sandow; P. Fozooni; M. J. Lea; V. Ginodman; I. Shlimak

doi:10.1002/(SICI)1521-3951(199801)205:1<269::AID-PSSB269>3.0.CO;2-C

The Scaling Behaviour of the Metal-Insulator Transition of Isotopically Engineered Neutron-Transmutation Doped Germanium

R. Rentzsch
, A. N. Ionov
, Ch Reich
, M. Müller
, B. Sandow
, P. Fozooni
, M. J. Lea
, V. Ginodman
, I. Shlimak

Free University of Berlin
RAS - Ioffe Physico Technical Institute
Royal Holloway University of London

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We measured on the dielectric side, with |N/N_c - 1| ≤ 0.64 the critical indices of the metal-insulator transition (MIT) in n-Ge with low (1.4 and 12%) and medium (38 and 54%) compensation, prepared by neutron-transmutation doping (NTD) of isotopic mixtures of ⁷⁴Ge and ⁷⁰Ge. We analyzed from the temperature dependence of hopping resistance in the variable-range hopping (VRH) regime with Coulomb gap the scaling of the localization length a, and of the dielectric constant N. At low compensation we find that the critical indices are ν ≈ 1/2, ζ ≈ 1, which increase up to ν ≈ 1, ζ ≈ 2, for medium compensations.

Original language	English
Pages (from-to)	269-273
Number of pages	5
Journal	Physica Status Solidi (B): Basic Research
Volume	205
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199801)205:1<269::AID-PSSB269>3.0.CO;2-C
State	Published - Jan 1998

Access to Document

10.1002/(SICI)1521-3951(199801)205:1<269::AID-PSSB269>3.0.CO;2-C

Cite this

Rentzsch, R., Ionov, A. N., Reich, C., Müller, M., Sandow, B., Fozooni, P., Lea, M. J., Ginodman, V., & Shlimak, I. (1998). The Scaling Behaviour of the Metal-Insulator Transition of Isotopically Engineered Neutron-Transmutation Doped Germanium. Physica Status Solidi (B): Basic Research, 205(1), 269-273. https://doi.org/10.1002/(SICI)1521-3951(199801)205:1<269::AID-PSSB269>3.0.CO;2-C

@article{04974fd98e0946dc966079d13422248a,

title = "The Scaling Behaviour of the Metal-Insulator Transition of Isotopically Engineered Neutron-Transmutation Doped Germanium",

abstract = "We measured on the dielectric side, with |N/Nc - 1| ≤ 0.64 the critical indices of the metal-insulator transition (MIT) in n-Ge with low (1.4 and 12\%) and medium (38 and 54\%) compensation, prepared by neutron-transmutation doping (NTD) of isotopic mixtures of 74Ge and 70Ge. We analyzed from the temperature dependence of hopping resistance in the variable-range hopping (VRH) regime with Coulomb gap the scaling of the localization length a, and of the dielectric constant N. At low compensation we find that the critical indices are ν ≈ 1/2, ζ ≈ 1, which increase up to ν ≈ 1, ζ ≈ 2, for medium compensations.",

author = "R. Rentzsch and Ionov, \{A. N.\} and Ch Reich and M. M{\"u}ller and B. Sandow and P. Fozooni and Lea, \{M. J.\} and V. Ginodman and I. Shlimak",

year = "1998",

month = jan,

doi = "10.1002/(SICI)1521-3951(199801)205:1<269::AID-PSSB269>3.0.CO;2-C",

language = "אנגלית",

volume = "205",

pages = "269--273",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

number = "1",

}

Rentzsch, R, Ionov, AN, Reich, C, Müller, M, Sandow, B, Fozooni, P, Lea, MJ, Ginodman, V & Shlimak, I 1998, 'The Scaling Behaviour of the Metal-Insulator Transition of Isotopically Engineered Neutron-Transmutation Doped Germanium', Physica Status Solidi (B): Basic Research, vol. 205, no. 1, pp. 269-273. https://doi.org/10.1002/(SICI)1521-3951(199801)205:1<269::AID-PSSB269>3.0.CO;2-C

TY - JOUR

T1 - The Scaling Behaviour of the Metal-Insulator Transition of Isotopically Engineered Neutron-Transmutation Doped Germanium

AU - Rentzsch, R.

AU - Ionov, A. N.

AU - Reich, Ch

AU - Müller, M.

AU - Sandow, B.

AU - Fozooni, P.

AU - Lea, M. J.

AU - Ginodman, V.

AU - Shlimak, I.

PY - 1998/1

Y1 - 1998/1

N2 - We measured on the dielectric side, with |N/Nc - 1| ≤ 0.64 the critical indices of the metal-insulator transition (MIT) in n-Ge with low (1.4 and 12%) and medium (38 and 54%) compensation, prepared by neutron-transmutation doping (NTD) of isotopic mixtures of 74Ge and 70Ge. We analyzed from the temperature dependence of hopping resistance in the variable-range hopping (VRH) regime with Coulomb gap the scaling of the localization length a, and of the dielectric constant N. At low compensation we find that the critical indices are ν ≈ 1/2, ζ ≈ 1, which increase up to ν ≈ 1, ζ ≈ 2, for medium compensations.

AB - We measured on the dielectric side, with |N/Nc - 1| ≤ 0.64 the critical indices of the metal-insulator transition (MIT) in n-Ge with low (1.4 and 12%) and medium (38 and 54%) compensation, prepared by neutron-transmutation doping (NTD) of isotopic mixtures of 74Ge and 70Ge. We analyzed from the temperature dependence of hopping resistance in the variable-range hopping (VRH) regime with Coulomb gap the scaling of the localization length a, and of the dielectric constant N. At low compensation we find that the critical indices are ν ≈ 1/2, ζ ≈ 1, which increase up to ν ≈ 1, ζ ≈ 2, for medium compensations.

UR - https://www.scopus.com/pages/publications/0032353774

U2 - 10.1002/(SICI)1521-3951(199801)205:1<269::AID-PSSB269>3.0.CO;2-C

DO - 10.1002/(SICI)1521-3951(199801)205:1<269::AID-PSSB269>3.0.CO;2-C

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0032353774

SN - 0370-1972

VL - 205

SP - 269

EP - 273

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

IS - 1

ER -

The Scaling Behaviour of the Metal-Insulator Transition of Isotopically Engineered Neutron-Transmutation Doped Germanium

Abstract

Access to Document

Other files and links

Fingerprint

Cite this