TY - JOUR
T1 - The Scaling Behaviour of the Metal-Insulator Transition of Isotopically Engineered Neutron-Transmutation Doped Germanium
AU - Rentzsch, R.
AU - Ionov, A. N.
AU - Reich, Ch
AU - Müller, M.
AU - Sandow, B.
AU - Fozooni, P.
AU - Lea, M. J.
AU - Ginodman, V.
AU - Shlimak, I.
PY - 1998/1
Y1 - 1998/1
N2 - We measured on the dielectric side, with |N/Nc - 1| ≤ 0.64 the critical indices of the metal-insulator transition (MIT) in n-Ge with low (1.4 and 12%) and medium (38 and 54%) compensation, prepared by neutron-transmutation doping (NTD) of isotopic mixtures of 74Ge and 70Ge. We analyzed from the temperature dependence of hopping resistance in the variable-range hopping (VRH) regime with Coulomb gap the scaling of the localization length a, and of the dielectric constant N. At low compensation we find that the critical indices are ν ≈ 1/2, ζ ≈ 1, which increase up to ν ≈ 1, ζ ≈ 2, for medium compensations.
AB - We measured on the dielectric side, with |N/Nc - 1| ≤ 0.64 the critical indices of the metal-insulator transition (MIT) in n-Ge with low (1.4 and 12%) and medium (38 and 54%) compensation, prepared by neutron-transmutation doping (NTD) of isotopic mixtures of 74Ge and 70Ge. We analyzed from the temperature dependence of hopping resistance in the variable-range hopping (VRH) regime with Coulomb gap the scaling of the localization length a, and of the dielectric constant N. At low compensation we find that the critical indices are ν ≈ 1/2, ζ ≈ 1, which increase up to ν ≈ 1, ζ ≈ 2, for medium compensations.
UR - http://www.scopus.com/inward/record.url?scp=0032353774&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1521-3951(199801)205:1<269::AID-PSSB269>3.0.CO;2-C
DO - 10.1002/(SICI)1521-3951(199801)205:1<269::AID-PSSB269>3.0.CO;2-C
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AN - SCOPUS:0032353774
SN - 0370-1972
VL - 205
SP - 269
EP - 273
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
IS - 1
ER -