The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition

J. M. Smith; P. C. Klipstein; D. G. Austing; R. Grey; G. Hill

doi:10.1016/0022-3697(94)00224-x

The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition

J. M. Smith, P. C. Klipstein, D. G. Austing, R. Grey, G. Hill

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We examine in detail the first high pressure resonance related to tunneling between the lowest transverse X-state in each AlAs layer, of GaAs/AlAs 'double barrier' structures with equal AlAs thicknesses grown by Molecular Beam Epitaxy (MBE) calibrated using Reflection High Energy Electron Diffraction (RHEED), and we compare the results with previously reported measurements on Metalorganic Vapour Phase Epitaxy (MOVPE) grown structures. The resonance, which does not conserve in-plane momentum, is much sharper and more asymmetric between forward and reverse biases in MBE structures, and the sense of the asymmetry in these structures, which can be as large as 6:1, always appears to be the same relative to the polarity of the substrate. At the same time momentum conserving resonances, such as the ambient pressure Γ-resonance, remain highly symmetric in all samples, confirming that the two AlAs layers have closely equal thicknesses. The lack of in-plane momentum conservation results in great sensitivity to differences in roughness at the two types of interface (AlAs grown on GaAs or GaAs grown on AlAs), and to differences in roughness related to the method of growth (MBE and MOVPE).

Original language	English
Pages (from-to)	475-479
Number of pages	5
Journal	Journal of Physics and Chemistry of Solids
Volume	56
Issue number	3-4
DOIs	https://doi.org/10.1016/0022-3697(94)00224-x
State	Published - 1995
Externally published	Yes

Bibliographical note

Funding Information:
Acknowledgements-We are gratefulf or the careful MBE growth of samplesA and B by G. W. Smith, and for the processingo f theses amplesin to mesas tructuresw ith the assistanceo f A. W. Higgs and H. J. Hutchinson,a t the DefenseR esearchA gency, Malvern. WorcestershireT. his work was supportedb y the Sciencea nd EngineeringR e-searchC ouncil of the U.K., and the Human Capital and Mobility Programmeo f the EuropeanC ommunityc, ontract numberC HRXCT 930321.

Funding

Acknowledgements-We are gratefulf or the careful MBE growth of samplesA and B by G. W. Smith, and for the processingo f theses amplesin to mesas tructuresw ith the assistanceo f A. W. Higgs and H. J. Hutchinson,a t the DefenseR esearchA gency, Malvern. WorcestershireT. his work was supportedb y the Sciencea nd EngineeringR e-searchC ouncil of the U.K., and the Human Capital and Mobility Programmeo f the EuropeanC ommunityc, ontract numberC HRXCT 930321.

Funders	Funder number
Human Capital and Mobility Programmeo f the EuropeanC ommunityc	HRXCT 930321
Sciencea nd EngineeringR e-searchC ouncil
U.K.

Keywords

A. quantum wells
C. high pressure
D. transport properties

Access to Document

10.1016/0022-3697(94)00224-x

Cite this

@article{8f8f36bbb52547f4a7bd117afd6a7395,

title = "The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition",

abstract = "We examine in detail the first high pressure resonance related to tunneling between the lowest transverse X-state in each AlAs layer, of GaAs/AlAs 'double barrier' structures with equal AlAs thicknesses grown by Molecular Beam Epitaxy (MBE) calibrated using Reflection High Energy Electron Diffraction (RHEED), and we compare the results with previously reported measurements on Metalorganic Vapour Phase Epitaxy (MOVPE) grown structures. The resonance, which does not conserve in-plane momentum, is much sharper and more asymmetric between forward and reverse biases in MBE structures, and the sense of the asymmetry in these structures, which can be as large as 6:1, always appears to be the same relative to the polarity of the substrate. At the same time momentum conserving resonances, such as the ambient pressure Γ-resonance, remain highly symmetric in all samples, confirming that the two AlAs layers have closely equal thicknesses. The lack of in-plane momentum conservation results in great sensitivity to differences in roughness at the two types of interface (AlAs grown on GaAs or GaAs grown on AlAs), and to differences in roughness related to the method of growth (MBE and MOVPE).",

keywords = "A. quantum wells, C. high pressure, D. transport properties",

author = "Smith, {J. M.} and Klipstein, {P. C.} and Austing, {D. G.} and R. Grey and G. Hill",

note = "Funding Information: Acknowledgements-We are gratefulf or the careful MBE growth of samplesA and B by G. W. Smith, and for the processingo f theses amplesin to mesas tructuresw ith the assistanceo f A. W. Higgs and H. J. Hutchinson,a t the DefenseR esearchA gency, Malvern. WorcestershireT. his work was supportedb y the Sciencea nd EngineeringR e-searchC ouncil of the U.K., and the Human Capital and Mobility Programmeo f the EuropeanC ommunityc, ontract numberC HRXCT 930321.",

year = "1995",

doi = "10.1016/0022-3697(94)00224-x",

language = "אנגלית",

volume = "56",

pages = "475--479",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Ltd.",

number = "3-4",

}

TY - JOUR

T1 - The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition

AU - Smith, J. M.

AU - Klipstein, P. C.

AU - Austing, D. G.

AU - Grey, R.

AU - Hill, G.

N1 - Funding Information: Acknowledgements-We are gratefulf or the careful MBE growth of samplesA and B by G. W. Smith, and for the processingo f theses amplesin to mesas tructuresw ith the assistanceo f A. W. Higgs and H. J. Hutchinson,a t the DefenseR esearchA gency, Malvern. WorcestershireT. his work was supportedb y the Sciencea nd EngineeringR e-searchC ouncil of the U.K., and the Human Capital and Mobility Programmeo f the EuropeanC ommunityc, ontract numberC HRXCT 930321.

PY - 1995

Y1 - 1995

N2 - We examine in detail the first high pressure resonance related to tunneling between the lowest transverse X-state in each AlAs layer, of GaAs/AlAs 'double barrier' structures with equal AlAs thicknesses grown by Molecular Beam Epitaxy (MBE) calibrated using Reflection High Energy Electron Diffraction (RHEED), and we compare the results with previously reported measurements on Metalorganic Vapour Phase Epitaxy (MOVPE) grown structures. The resonance, which does not conserve in-plane momentum, is much sharper and more asymmetric between forward and reverse biases in MBE structures, and the sense of the asymmetry in these structures, which can be as large as 6:1, always appears to be the same relative to the polarity of the substrate. At the same time momentum conserving resonances, such as the ambient pressure Γ-resonance, remain highly symmetric in all samples, confirming that the two AlAs layers have closely equal thicknesses. The lack of in-plane momentum conservation results in great sensitivity to differences in roughness at the two types of interface (AlAs grown on GaAs or GaAs grown on AlAs), and to differences in roughness related to the method of growth (MBE and MOVPE).

AB - We examine in detail the first high pressure resonance related to tunneling between the lowest transverse X-state in each AlAs layer, of GaAs/AlAs 'double barrier' structures with equal AlAs thicknesses grown by Molecular Beam Epitaxy (MBE) calibrated using Reflection High Energy Electron Diffraction (RHEED), and we compare the results with previously reported measurements on Metalorganic Vapour Phase Epitaxy (MOVPE) grown structures. The resonance, which does not conserve in-plane momentum, is much sharper and more asymmetric between forward and reverse biases in MBE structures, and the sense of the asymmetry in these structures, which can be as large as 6:1, always appears to be the same relative to the polarity of the substrate. At the same time momentum conserving resonances, such as the ambient pressure Γ-resonance, remain highly symmetric in all samples, confirming that the two AlAs layers have closely equal thicknesses. The lack of in-plane momentum conservation results in great sensitivity to differences in roughness at the two types of interface (AlAs grown on GaAs or GaAs grown on AlAs), and to differences in roughness related to the method of growth (MBE and MOVPE).

KW - A. quantum wells

KW - C. high pressure

KW - D. transport properties

UR - http://www.scopus.com/inward/record.url?scp=0542443500&partnerID=8YFLogxK

U2 - 10.1016/0022-3697(94)00224-x

DO - 10.1016/0022-3697(94)00224-x

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0542443500

SN - 0022-3697

VL - 56

SP - 475

EP - 479

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 3-4

ER -

The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition

Abstract

Bibliographical note

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this