The reduction of threading dislocations in GaN using a GaN nanocolumn interlayer

L. Meshi, D. Cherns, I. Griffiths, S. Khongphetsak, A. Gott, C. Liu, S. Denchitcharoen, P. Shields, W. Wang, R. Campion, S. Novikov, T. Foxon

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

Epitaxial lateral overgrowth (ELO) has been used to reduce threading dislocation (TD) densities in GaN. This paper reports transmission and scanning electron microscopy studies of TDs in GaN films grown by ELO on GaN nanocolumns produced either during growth by MBE (method 1), or by self-organised patterning on a uniform layer grown by MOCVD (method 2). In method 1, isolated nanocolumns grew without TDs, but some TDs formed when nanocolumns coalesced. Although some of these TDs extended through the overlayer, extensive lateral migration of others, depending on the dislocation type, led to dislocation annihilation, lowering the overall TD density. In method 2, a similar process of lateral migration of TDs was observed during ELO, resulting in a continuous GaN overlayer with TD densities less than 108 cm-2.

Original languageEnglish
Pages (from-to)1645-1647
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
StatePublished - 2008
Externally publishedYes
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 16 Sep 200721 Sep 2007

Funding

FundersFunder number
Engineering and Physical Sciences Research CouncilEP/E000673/1, EP/D080622/1, EP/D080762/1

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