The minimum metallic conductivity in heavily doped semiconductors the experimental evidence and its interpretation

N. F. Mott, M. Kaveh

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A summary is given of some recent conclusions by the authors and others on the nature of the metal-insulator transition in Si: P, particularly in the light of recent observations by Thomas and co-workers. It is maintained that in uncompensated semiconductors the transition is first order, and that work on compensated materials at very low temperatures is needed to find out if a 'minimum metallic conductivity' exists.

Original languageEnglish
Pages (from-to)17-24
Number of pages8
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume47
Issue number2
DOIs
StatePublished - Feb 1983

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