The electronic structure of silicon

Moshe Deutsch

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


A detailed description of the electronic structure of the crystal-bound silicon atom is derived, using recent millielectron level accuracy X-ray structure factors. A 0.5% expansion of the L shell is detected for the first time, in addition to the known ∼6% expansion for the M shell. The breakdown of the rigid-atom approximation for the atomic thermal motion is demonstrated, and strong evidence is presented against an anharmonic term in the effective one-atom potential, in contrast with neutron measurement but in concord with recent X-ray results.

Original languageEnglish
Pages (from-to)368-372
Number of pages5
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Issue number6-7
StatePublished - 11 Mar 1991


Dive into the research topics of 'The electronic structure of silicon'. Together they form a unique fingerprint.

Cite this